Browsing by Author "Kung, Bo-Cheng"

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Self-Heating Effect on Bias-Stressed Reliability for Low-Temperature a-Si:H TFT on Flexible Substrate
(2010-03-01)
Kao, Shih-Chin
;
Zan, Hsiao-Wen
;
Huang, Jung-Jie
;
Kung, Bo-Cheng
;
光電工程學系
Hydrogenated amorphous silicon thin-film transistors on colorless polyimide substrates were successfully fabricated at a low process temperature (160 degrees C). The gate leakage current is as low as 10(-13) A, while the field-effect mobility is 0.42 cm(2)V(-1) . s(-1), and the subthreshold swing is 0.77 V/dec. Using bias-temperature stress on devices with different channel widths, the enhancement of self-heating effect on bias-stressed reliability is investigated for the first time. Elevated temperature due to self-heating effect is estimated either by extending the bias-stressed model or by modifying the thermal equivalent circuit model. Degradation of device reliability on a bent substrate is also significant when self-heating effect is incorporated.