Browsing by Author "Kung, Chung-Yuan"

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A novel self-aligned field induced drain polycrystalline silicon thin film transistor fabricated by using a selective side etch process
(2007)
Liao, Ta-Chuan
;
Wu, Chun-Yu
;
Chien, Feng-Tso
;
Tsai, Chun-Chien
;
Chen, Hsiu-Hsin
A novel T-shaped-gated (T-Gate) polycrystalline silicon thin-film transistor (poly-Si TFT) with vacuum gaps has been proposed and fabricated only with a simple process. The T-Gate structure is formed only by a selective undercut-etching technology of the Mo/Al bi-layers. Then, vacuum gaps are in-situ embedded in this T-Gate structure subsequent to capping the SiH4-based passivation oxide under the vacuum process chamber. Experimental results reveal that the proposed T-Gate poly-Si TFTs have excellent electrical performance, which has maximum on-off current ratio of 4.6 x 10(7), and off-state leakage current at V-GS = -10 V and V-DS = 5V of about 100 times less than that of the conventional one. These improvements are attributed to the additional undoped offset region and the vacuum gap, which reduce the maximum electric field at drain junction while the sub-gate maintains the on-current. Therefore, such a T-Gate poly-Si TFT is very suitable for the applications and manufacturing in active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting diodes (AMOLEDs).
A poly-Si thin-film transistor with the in situ vacuum gaps under the T-shaped-gated electrode
(2006)
Liao, Ta-Chuan
;
Wu, Chun-Yu
;
Chien, Feng-Tso
;
Tsai, Chun-Chien
;
Chen, Hsiu-Hsin
A T-shaped-gated (T-gate) poly-Si thin-film transistor (TFT) with symmetric vacuum gaps has been proposed and fabricated simply with a selective-etching technique and an in situ vacuum encapsulation. The proposed TFT has demonstrated a higher maximum on-off current ratio and superior reliability compared to the conventional TFTs. This is attributed to the resulting offset region and vacuum gap to reduce the off-state leakage current and improve the hot-carrier reliability, while the extra subgate serves to induce an inversion layer at the offset region to maintain the on current during the on state. Therefore, such a T-gate poly-Si TFT is very suitable for manufacturing and applications in active-matrix flat panel electronics. (c) 2006 The Electrochemical Society.