Browsing by Author "Kung, Shu-Yen"

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Broadband Quantum-Dot Infrared Photodetector
(2010-07-01)
Lin, Wei-Hsun
;
Tseng, Chi-Che
;
Chao, Kuang-Ping
;
Kung, Shu-Yen
;
Lin, Shih-Yen
In this letter, we report the five-period quantum-dot infrared photodetectors (QDIPs) with a bi-stacked quantum-dot (QD) structure for a wide and relatively flat detection response ranging from 4 to 11 m with high responsivities. The bi-stacked QD structure consists of a standard InAs QD and an InGaAs-capped InAs QD layer separated by a 50-nm GaAs barrier layer. The device exhibits a wide detection window in the range of 4-11 mu m with high responsivities, which suggests that similar responsivities can be obtained for the standard QD and the InGaAs-capped QD layers in the mid-wavelength (MWIR) and long-wavelength (LWIR) infrared ranges, respectively. The results are advantageous for the development of broadband QDIPs covering MWIR and LWIR ranges based on the stacked QD structures.
Wavelength-tunable InGaAs-capped quantum-dot infrared photodetectors for multi-color detection
(2011-05-01)
Lin, Wei-Hsun
;
Lin, Shih-Yen
;
Tseng, Chi-Che
;
Kung, Shu-Yen
;
Chao, Kuang-Ping
A two-terminal quantum-dot infrared photodetector (QDIP) with stacked 5-period InAs/GaAs and InGaAs-capped InAs/GaAs QD structures is investigated in this paper. The device has exhibited distinct responses at mid-wavelength and long-wavelength infrared regions under positive and negative biases, respectively. Also observed for the device are the equal normal absorption ratios under different voltage biases for the device under either MWIR or LWIR ranges. The device has revealed its potential in the application of voltage-tunable and multi-color detections. (C) 2010 Elsevier B.V. All rights reserved.