Browsing by Author "Kuo, CN"

Now showing 1 - 8 of 8

40GHz miniature bandpass filter design in standard CMOS process
(2004)
Tso, HT
;
Kuo, CN
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
An on-chip high performance 40GHz miniature bandpass filter is presented. Implemented in a standard CMOS process without any extra post processing, the filter features in small size (72*400um(2)) and low insertion loss (1.1dB) by using a high slow-wave-factor coplanar stripline (HS-CPS).
A 6 similar to 10-GHz ultra-WideBand tunable LNA
(2005)
Chen, YC
;
Kuo, CN
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this paper a CMOS low noise amplifier (LNA) is designed with tunable output over an ultra-wideband. The cascode configuration is employed in this circuit, with the inductive source degeneration (ISD) and a three-section band-pass Chebyshev filter to achieve broadband input impedance matching. A source follower acts as the buffer stage for broadband output impedance matching. Signal output is band-tunable over the frequency range from 6-GHz to MGM. The circuit is fabricated in a standard 0.18um CMOS process. Circuit performance achieves maximum power gain, S21, of 11.6 dB, the input return loss, S11, better than 9 dB, and the best noise figure of 4.2dB. The circuit consumes power of 11.6mW.
A CMOS dual-mode RF front-end receiver for GSM and WCDMA
(2004)
Ko, CL
;
Kuo, MC
;
Hsu, CM
;
Kuo, CN
;
交大名義發表
A dual-mode, triple-band RF front-end receiver for GSM900, DCS1800 and WCDMA is presented. Because the system concepts of GSM and WCDMA are totally different from the standards, the chip uses low-IF and zero-IF receiver architecture for GSM and WCDMA, respectively. This chip consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end has been implemented in a standard 0.25um CMOs process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3dB, 36dB for the GSM900, 5.9dB, 31dB for the DCS1800, and ?-dB, 17.2dB for the WCDMA, respectively.
A CMOS dual-mode RF front-end receiver for GSM and WCDMA applications
(2005-06-01)
Ko, CL
;
Kuo, MC
;
Kuo, CN
;
交大名義發表
;
National Chiao Tung University
A dual-mode, triple-band RF front-end receiver for GSM900, DCS800 and WCDMA is presented in this paper. This chip uses low-IF and zero-IF receiver architectures for GSM and WCDMA respectively to fulfill the entirely different system requirements of the two standards. It consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end is implemented in a standard 0.25 mu m CMOS process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3 dB, 36 dB for the GSM900, 5.9 dB, 31 d13 for the DCS 1800, and 4.3 dB, 29.6 dB for the WCDMA, respectively.
Broadband characterization of miniaturized on-chip differential circuits using G-S-G probe
(2004)
Tso, HT
;
Kuo, CN
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
An approach is presented to characterize on-chip differential coplanar-strip-line (CPS) test circuits using G-S-G probes. With a symmetric duplicate of the test circuit in shunt connection, the circuit can be characterized over a wide frequency range. This method is especially effective to miniaturized circuits. A 40-GHz silicon-based filter is employed for demonstration.
Chemistry of Ti(OiPr)Cl-3 with chloride and oxygen-containing ligands: The roles of alkoxide and solvents in the six-coordinate titanium complexes
(1996-03-27)
Gau, HM
;
Lee, CS
;
Lin, CC
;
Jiang, MK
;
Ho, YC
Ti((OPr)-Pr-i)Cl-3 reacts easily with various ligands to form a series of six-coordinate complexes, [Ti((OPr)-Pr-i)Cl-5](2-)(HAm+)(2) (Am = NEt(3) (7a) or NC5H5 (7b)), Ti((OPr)-Pr-i)Cl(3)L(2) (L = THF (8) or PhCHO (9)), Ti((OPr)-Pr-i)-Cl-3(PhCHO)(Et(2)O) (10), and [Ti((OPr)-Pr-i)Cl-2(mu-Cl)(PhC(O)OMe)](2) (11). Upon dissolution of 7a in THF, 8 was obtained. When 1 mol equiv of HNEt(3)Cl was added to 8, [Ti((OPr)-Pr-i)Cl-4(THF)](-)(HNEt(3))+ (12) was obtained. With the addition of another 1 mol equiv of HNEt(3)Cl, 12 was converted to 7a. One THF in 8 can be removed in vacuo to give the chloride-bridged dimer [Ti((OPr)-Pr-i)Cl-2(mu-Cl)(THF)](2) (13) which can be converted back to 8 by dissolving in THF. 13 was found to react with 2 mol equiv of HNEt(3)Cl or PhCHO to give 12 and Ti((OPr)-Pr-i)Cl-3(PhCHO)(THF) (14), respectively. The molecular structures of 7b, 8, and 10-13 show short Ti-(OPr)-Pr-i distances, and the relative bonding order of (OPr)-O---Pr-i > Cl-, THF > Et(2)O > PhCHO > mu-Cl- > RC(O)OMe is discussed based on the solid state structures. This bonding sequence is very useful for the prediction of the geometry for six-coordinate complexes of early transition metals with the following principle: The strongest ligand prefers a trans position to the weakest ligand, and the second strongest ligand favors a trans position to the second weakest ligand in the complex. Kinetically, the trans position to the isopropoxide is rather labile for substitution, and the lability of the trans ligand ensures the effectiveness of titanium alkoxides for subsequent reactions or as catalysts in many asymmetric organic syntheses.
Low power 8-GHz ultra-wideband active balun
(2006)
Hsu, TT
;
Kuo, CN
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback the circuit provides a differential signal within 2dB and 3 degrees of gain and phase imbalance, respectively, Lip to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost.
Low-power and high-linearity mixer design using complex transconductance equivalent circuit
(2005)
Zhan, WC
;
Kuo, CN
;
Guo, JC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A compact equivalent circuit using a complex transconductance is proposed for linearity design in the multiple gated transistors configuration. This complex transconductance gives better design parameters as compared to previous published analysis. Measured data show that the designed mixer has conversion gain of 4.7 dB, input return loss of 9 dB, and third-order input intercept point (IIP3) of 10.3 dBm with only 1.8 mW power dissipation under 1-V supply voltage.