Browsing by Author "Kuo, Cheng Tzu"
Now showing 1 - 7 of 7
- Results Per Page
- Sort Options
Item type:Item, Charge storage characteristics of iridium silicide nanocrystals embedded in SiO(2) matrix for nonvolatile memory application(2010-10-01) ;Wang, Terry Tai-Jui ;Hung, Shih Wei ;Chuang, Pi Kai ;Kuo, Cheng Tzu材料科學與工程學系In this work, the nanostructure-assisted "Al/SiO(2)/Ir-silicide-NCs/SiO(2)/P-Si-sub/Al" stack with iridium silicide nanocrystals (Ir-silicide-NCs) embedded between two SiO(2) layers has been demonstrated in the application of nonvolatile memory for the first time. A significant memory window voltage of 14.2 Vat sweeps of +/- 10 V by capacitance-voltage measurement can be reached, when well-distributed Ir-silicide-NCs are observed in cross-sectional TEM examination. In this case, the trap density is estimated to be about 1.06 x 10(13) cm(-2), indicating a high trapping efficiency stack for nonvolatile memory application. (C) 2010 Elsevier B.V. All rights reserved.Item type:Item, Charge storage characteristics of iridium silicide nanocrystals embedded in SiO2 matrix for nonvolatile memory application(2010-10-01) ;Wang, Terry Tai-Jui ;Hung, Shih Wei ;Chuang, Pi Kai ;Kuo, Cheng Tzu材料科學與工程學系In this work, the nanostructure-assisted "Al/SiO2/Ir-silicide-NCs/SiO2/P-Si-sub/Al" stack with iridium silicide nanocrystals (Ir-silicide-NCs) embedded between two SiO2 layers has been demonstrated in the application of nonvolatile memory for the first time. A significant memory window voltage of 14.2 Vat sweeps of +/- 10 V by capacitance-voltage measurement can be reached, when well-distributed Ir-silicide-NCs are observed in cross-sectional TEM examination. In this case, the trap density is estimated to be about 1.06 x 10(13) cm(-2), indicating a high trapping efficiency stack for nonvolatile memory application. (C) 2010 Elsevier B.V. All rights reserved.Item type:Item, Development of a high performance integrated sensor chip with a multi-walled carbon nanotube assisted sensing array(2013-02-01) ;Chuang, Pi Kai ;Wang, Li Chun ;Kuo, Cheng Tzu ;材料科學與工程學系Department of Materials Science and EngineeringFor room temperature toxic gas sensing, a system chip with a MWCNT (multi-walled carbon nanotube)-assisted array of 30 sensors (two sensors for each of 15 sensor types) was developed. Gases tested include four simulants of chemical warfare agents: dichloromethane, acetonitrile, 2-chloroethyl ethyl sulfide, and dimethyl-methyl phosphonate (DMMP). By selecting 15 different functional polymer materials, each composite sensor composed of 15 sensing stacks (polymer/MWCNTs/Si(001), wafer) was fabricated by a solution droplet casting method to simplify the process. The principle of gas sensing is basically to measure the resistivity change of the composite sensor device upon contact with a target gas. One of the advantages of the sensing stack having a polymer overlayer above the MWCNT layer is being able to protect the MWCNT from direct interaction with the gas to improve sensor life and sensitivity. The results indicate that a fingerprint pattern of the sensor radar plot can be determined for each testing run, and that specificity can be achieved through a 3-D principal component analysis of the radar plots. The results also show that a linear relationship between the resistance response and concentration is clearly evident for these four toxic gases. By extrapolation and careful process monitoring, a sensitivity much lower than 43 ppm for DMMP vapor is likely. The gas sensing mechanisms are discussed in the text. (C) 2012 Elsevier B.V. All rights reserved.Item type:Item, Formation of Bamboo-Like Carbon Nanotubes and Nanofibers Using Co-Si-O and Co-Si Catalysts(2010) ;Chang, Hui Lin ;Kuo, Cheng Tzu ;材料科學與工程學系Department of Materials Science and EngineeringBamboo-like carbon nanotubes were synthesized by microwave plasma chemical vapor deposition (MPCVD) using CH(4) and N(2) as source gases in various ratios. Two types of catalytic films, namely, a condition 1, Co film/SiO(2)/Si substrate, and, a Co film/Si substrate layer with rapid thermal annealing (RTA; condition 2), were used as catalysts to grow carbon nanotubes. The interaction between the catalytic film and the Si substrate or between the catalytic film and the SiO(2) interlayer occurred during the H(2) reduction step before nanotube growth. The chemical compositions of catalytic particles capping the carbon nanotubes were identified by energy-dispersive X-ray spectroscopy (EDS) as Co-Si-O and Co-Si for conditions 1 and 2, respectively. The growth of the base and tip growths was investigated and is suggested to be governed by the capillary effect and the strength of adhesion between the catalytic particles and the underlayer. Transmission electron microscopy (TEM) analysis reveals that the carbon nanotubes and nanofibers have bamboo-like structures with hollow internal compartments. The formation mechanisms of these bamboo-like structures are discussed. (C) 2010 The Japan Society of Applied PhysicsItem type:Item, Multi-Walled Carbon Nanotubes Growing Vertically from Root Particles(2010) ;Chang, Hui Lin ;Kuo, Cheng Tzu ;材料科學與工程學系Department of Materials Science and EngineeringThe catalytic growth of multi-walled carbon nanotubes (MWCNTs) was performed on Si substrates with and without interfacial layers, by microwave plasma chemical vapor deposition (MPCVD). Many vertically grown, dense MWCNTs attached to a catalytic film penetrated the root particles. The diameter of root particles, in the order of 100 nm, is larger than the tube diameters of 10-15 nm. Base growth and tip growth are proposed as part of a new CNT growth model. The interaction between catalytic film and the supporting interfacial layer is suggested to determine whether the catalytic particles are driven up or pinned down on the substrate during the growth. (C) 2010 The Japan Society of Applied PhysicsItem type:Item, STRUCTURES AND PROPERTIES OF THE CRYSTALLINE Si-C-N USING ADDITIONAL Si-SOURCE AND Co-CATALYST(2003-12-01) ;Chang, Hui Lin ;Fang, Jau Shiung ;Kuo, Cheng Tzu ;材料科學與工程學系Department of Materials Science and EngineeringSi-C-N films were synthesized on Si substrates by microwave plasma chemical vapor deposition (MPCVD) with a mixture of CH4 and N-2 as gaseous sources, and Co-coated Si columns to act as a catalyst and an additional Si source. Two conditions, conditions 1 and 2, were implemented by varying the time at which the solid sources were introduced. Under condition 1, the solid sources were applied \'before\' film deposition. Under condition 2, the solid sources were applied both \'before and during\' film depositions. Analytical results indicate, although that both conditions yield crystalline Si-C-N films, the time at which the solid sources are applied is critically affects the films\' structures and properties. Synthesizing Si-C-N films under condition 1 yields crystals with more re-nucleation, a structure closer to a pseudo T-Si3N4 structure, a higher C content, detectable Si(2p)-C bonding, lower nano-hardness and better field emission properties. Synthesis of film under condition 2 yields, crystals with more facets, a structure closer to pseudo alpha-Si3N4 and an additional thin layer under the crystalline layer. SEM, TEM, XPS, XRD, nanoindentor and field emission were used to characterize the film\' structures and properties.Item type:Item, Synthesis and Characterization of Silicon and Nitrogen Containing Carbon-Based Crystals and Their Nanostructured Materials(2014) ;Chang, Hui Lin ;Chang, Chi Tso ;Kuo, Cheng Tzu ;交大名義發表材料科學與工程學系The synthesis of carbon-based materials, such as man-made diamonds, superhard C3N4 materials, SiCN crystals, and other carbon-based nanostructured materials, has attracted considerable attention for many decades in academic and industrial communities. However, so far, researchers have not successfully linked the growth mechanisms of carbon-based materials deposited under different synthetic conditions and methods. In fact, a single machine may produce many of these materials. This paper is aimed to study the linkages among various carbon-based materials synthesized on Si wafers using the same microwave plasma chemical vapor deposition system, including SiCN crystalline films, SiCN nanotubes, carbon nanotubes (CNTs), conical carbon nanorods, and other nanostructured materials. (C) The Author(s) 2014. Published by ECS. All rights reserved.