Browsing by Author "Kuo, DS"

Now showing 1 - 3 of 3

N-channel versus P-channel flash EEPROM - Which one has better reliabilities
(2001)
Chung, SS
;
Liaw, ST
;
Yih, CM
;
Ho, ZH
;
Lin, CJ
In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, the hot-carrier reliability issues such as disturbs, endurance, in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using DINOR structure. These results can be used as a guideline for designers to choose. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These meet the scaling trend such that it is a promising candidate for future flash memory applications.
Novel selective process via self-assembled monolayers for pattern growth of carbon nanotubes
(2004-04-01)
Kuo, DS
;
Chen, PL
;
Kuo, CT
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In this study, a novel IC compatible deposition process to fabricate the CNTs pattern with tunable tube number density was successfully developed by using the liquid chemical technologies of self-assembled monolayers (SAMs) and the Fe-assisted CNTs growth. The tube number density could be controlled by changing the SAMs formation and post processing parameters. The Si wafers with the a:Si/Si3N4 layer patterns were first prepared by low pressure chemical vapor deposition (LPCVD) and lithography techniques to act as the substrates for selective deposition of SAMs. The selectivity of SAMs from APTMS solution (N-(2-aminoethyl)-3-aminopropyltrimethoxsilane) is based on its greater reactivity of head group on a:Si than SO, films. The areas of pattern with SAMs will first chelate the Fe3+ ions by their diamine-terminated group. The Fe3+ ions were then consolidated to become Fe-hydroxides in NaBH, Solution to form the Fe-hydroxides pattern. Finally, the Fe-hydroxides pattern was pretreated in H plasma, and followed by CNTs deposition using Fe as catalyst in a microwave plasma-chemical vapor deposition (MPCVD) system to become the CNTs pattern. The products in each processing step, including SAMs, Fe-hydroxides and CNTs, were characterized by contact angle measurements, scanning electron microscopy (SEM), Raman, XPS and Auger spectroscopy. The results show that the main process parameters include the surface activation process and its atmosphere, consolidation time and temperature, H plasma pretreatment. The function of each processing step will be discussed. (C) 2004 Elsevier B.V. All rights reserved.
The performance and reliability enhancement of ETOX P-channel flash EEPROM cell with P-doped floating-gate
(2003)
Tsai, HW
;
Chiang, PY
;
Chung, SS
;
Kuo, DS
;
Liang, MS
In this paper, we proposed a simple approach for designing reliable and high performance p-channel Flash EEPROM cell from the floating-gate engineering point of view. In other words, a p-type doped floating gate used in a p-channel flash cell can achieve this goal. Results show that the programming speed, gate/drain disturb, read lifetime, and data retention in p-type floating-gate cell are much better than those of n-type floating-gate cell; except that p-type floating-gate cell has slower erasing speed. These results can be used as a guideline for designers to choose.