Browsing by Author "Kuo, F. Y."

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CMOS 0.18 mu m Standard Process Capacitive MEMS High-Q Oscillator with Ultra Low-Power TIA Readout System
(2014)
Kuo, F. Y.
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Chang, C. F.
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Wen, K. A.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
This paper presents the first monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69 mu W MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources.
Monolithic Multi-Sensor Design With Resonator-Based MEMS Structures
(2017-05-01)
Kuo, F. Y.
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Lin, C. Y.
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Chuang, P. C.
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Chien, C. L.
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Yeh, Y. L.
In this paper, we demonstrated a resonator-based MEMS architecture for multi-sensor SOC applications. A newly developed 0.18 mu m 1P6M CMOS ASIC/MEMS process was adopted to integrate MEMS sensor and circuits monolithically. By using resonators as the building blocks, multiple MEMS sensors including environmental temperature sensor, ambient pressure sensor, accelerometer as well as gyro sensor can be monolithically implemented with the readout circuits by the single standard ASIC/MEMS process without off-fab pre/post processes. The proposed architecture enables compact and innovative sentient-assisted SOC design for the emerging IOT applications.
Temperature-dependent yield effects on composite beams used in CMOS MEMS
(2013-03-01)
Kuo, F. Y.
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Chang, C. S.
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Liu, Y. S.
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Wen, K. A.
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Fan, L. S.
This paper presents an experimentally verified analytical model of temperature-dependent yield effects on the curvatures of composite beam structures used in complementary metal-oxide semiconductor microelectromechanical systems (CMOS MEMS). The temperature-dependent effects on composite beam curvatures of a thermal process can be predicted by extracting key parameters from the measured curvatures of a limited number of CMOS MEMS composite-layer combinations. The effects due to thermal history in MEMS packaging, which change the characteristics of beam curvatures due to material yield, are further analyzed. The models are verified with measured results from beam structures fabricated by an application-specific integrated circuit-compatible 0.18 mu m 1P6M CMOS MEMS process using a white light interferometer. These models can be applied in electronic design automation tools to provide good prediction of temperature-dependent properties related to CMOS MEMS beam curvature, such as sensing capacitance, for monolithic sensor system on chip design.