Browsing by Author "Kuo, Hao-chung"

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A Novel Tunable Green- to Yellow-Emitting beta-YFS:Ce(3+) Phosphor for Solid-State Lighting
(2011-08-01)
Wu, Yun-Chen
;
Wang, De-Yin
;
Chen, Teng-Ming
;
Lee, Chi-Shen
;
Chen, Kuo-Ju
A Ce(3+)-activated fluorosulfide phosphor (beta-YFS: Ce(3+)) was synthesized by solid-state reaction in a sealed tube. The crystal structure has been refined from the XRD profiles and there are two different crystallographic rare earth sites, namely, Y(1) and Y(2), where the Ce(3+) ions occupied. The emission band with a maximum at 495 nm of beta-Y(0.99)Ce(0.01) FS phosphor was characterized by the 4f-5d transitions of Ce(3+) ion. With increasing Ce(3+) concentration, the emission variations were observed from 495 to 547 nm. When beta-YFS:Ce(3+) phosphors were utilized to incorporate with n-UV/blue chip, greenish-white light with color rendering index of 65-77 were obtained. The results indicate that the tunable green- to yellow-emitting beta-YFS:Ce(3+) can serve as a potential phosphor for incorporation in fabrication for solid-state lighting. The preparation, spectroscopic characterization, quantum efficiency, thermal-quenching behavior, and related LED device data are also presented.
A Novel Tunable Green- to Yellow-Emitting beta-YFS:Ce3+ Phosphor for Solid-State Lighting
(2011-08-01)
Wu, Yun-Chen
;
Wang, De-Yin
;
Chen, Teng-Ming
;
Lee, Chi-Shen
;
Chen, Kuo-Ju
A Ce3+-activated fluorosulfide phosphor (beta-YFS: Ce3+) was synthesized by solid-state reaction in a sealed tube. The crystal structure has been refined from the XRD profiles and there are two different crystallographic rare earth sites, namely, Y(1) and Y(2), where the Ce3+ ions occupied. The emission band with a maximum at 495 nm of beta-Y0.99Ce0.01 FS phosphor was characterized by the 4f-5d transitions of Ce3+ ion. With increasing Ce3+ concentration, the emission variations were observed from 495 to 547 nm. When beta-YFS:Ce3+ phosphors were utilized to incorporate with n-UV/blue chip, greenish-white light with color rendering index of 65-77 were obtained. The results indicate that the tunable green- to yellow-emitting beta-YFS:Ce3+ can serve as a potential phosphor for incorporation in fabrication for solid-state lighting. The preparation, spectroscopic characterization, quantum efficiency, thermal-quenching behavior, and related LED device data are also presented.
Bio-Inspired Flexible Fluoropolymer Film for All-Mode Light Extraction Enhancement
(2019-05-29)
Liang, Renli
;
Hu, Run
;
Long, Hanling
;
Huang, Xinyu
;
Dai, Jiangnan
Enhancing the light extraction efficiency is a prevalent but vital challenge for most solid-state lighting technologies, especially for deep ultraviolet light-emitting diodes (DUV-LEDs). In this paper, inspired by the micro-structure of the butterfly's eye, we propose and fabricate a flexible fluoropolymer film (FFP film) to tackle this issue for all-mode, full-wavelength light extraction enhancement for most solid-state lighting technologies compatibly. The experimental results demonstrate that compared with one mounted with a smooth FFP film, the light output power of DUV-LED is enhanced up to 26.7% by mounting the FFP film with 325 nm radius nanocones at a driving current of 200 mA. Importantly, thanks to the super-flexible feature of the FFP film, it can both cover the top surface and sidewalls of the DUV-LED chip, leading to the improvement of transverse electric and transverse magnetic mode light extraction by 20.5 and 21.8%, respectively. Finite element analysis (FEA) simulations of the electric field distribution of DUV-LEDs with the FFP film reveal the underlying physics. The present strategy is proposed from the view of the packaging level, which is cost-effective, able to be manufactured at a large scale, and compatible with the solid-state lighting technologies.
High quality 10.6 mu m AIN grown on pyramidal patterned sapphire substrate by MOCVD
(2019-01-28)
Long, Hanling
;
Dai, Jiangnan
;
Zhang, Yi
;
Wang, Shuai
;
Tan, Bo
In this letter, we demonstrate a crack and strain free AlN epilayer with a thickness of 10.6 mu m grown on a pyramidal patterned sapphire substrate by metalorganic chemical vapor deposition. The full width at half maximum of the X-ray rocking curve was 165/185 arcsec for (002)/(102) planes, respectively. The total threading dislocation density was less than 3 x 10(8) cm(-2). The dislocation evolution and the coalescence process were probed by transmission electron microscopy and scanning electron microscopy. A dual coalescence of the AlN epilayer was observed, which can effectively relax strain during the heteroepitaxy process. Owing to the approximately entire strain relaxation demonstrated by reciprocal space mapping and Raman shift, the surface morphology was crack-free and atomically smooth with a root-mean-square roughness of 0.14 nm. Temperature dependent Raman spectra showed the Raman linewidth of 4.3 cm(-1) at 300 K which was comparable to that of bulk AlN; it also demonstrated good crystalline quality of the AlN epilayer. Published under license by AIP Publishing.
Interface Anchored Effect on Improving Working Stability of Deep Ultraviolet Light-Emitting Diode Using Graphene Oxide-Based Fluoropolymer Encapsulant
(2018-03-07)
Liang, Renli
;
Dai, Jiangnan
;
Xu, Linlin
;
Zhang, Yi
;
He, Ju
The graphene oxide (GO)-based fluoropolymer is first proposed as an interface encapsulant to improve the light extraction efficiency and achieve the ultralong working stability of deep ultraviolet light-emitting diodes (DUV-LEDs), benefitting from its superior interface performance based on an anchored effect. For the GO-based fluoropolymer composite, the anchored structure is designed to effectively and tightly rivet the quartz lens on the DUV-LED chip by using the interface reaction between GO embedded in fluoropolymer and 3-aminopropyltriethoxy-silane grafted on the surfaces. Experimental results show that on the basis of the interface anchored effect, the air voids in the interface layer of DUV-LED are reduced by 84%, leading to an improvement of the light output power by 15% and a decrease of the junction temperature by 5%, by virtue of the sealing characteristics of the 0.10 wt % GO-based fluoropolymer. In addition, the steady working time is dramatically improved by 660% and it was attributed to the good interface anchored bonding of the 0.10 wt % GO-based fluoropolymer. This novel graphene oxide-based fluoropolymer is believed to provide a feasible and effective interface encapsulant to improve the performance of DUV-LEDs.
Progress and prospects of GaN-based VCSEL from near UV to green emission
(2018-01-01)
Yu, Hsin-chieh
;
Zheng, Zhi-wei
;
Mei, Yang
;
Xu, Rong-bin
;
Liu, Jian-ping
GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the 'green gap'.
Pseudo-van der Waals Epitaxy of MoS2 on Patterned and Planar GaN Substrates
(2019-01-01)
Liu, Che-yu
;
Choi, Wonsik
;
Huang, Hsien-chih
;
Kim, Jeongdong
;
Jung, Kyooho
n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively. (c) 2019 The Author(s)
Ultrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructure
(2018-09-01)
Wang, Shuai
;
Dai, Jiangnan
;
Hu, Jiahui
;
Zhang, Shuang
;
Xu, Linlin
For the first time, an ultrahigh degree of optical polarization (DOP) of 81.8% in AlGaN-based deep ultraviolet LED (DUV-LED) operated at 286 nm has been experimentally demonstrated. The very high DOP was obtained by introducing the novel moth-eye microstructure fabricated on the backside of a sapphire substrate. Compared with conventional DUV-LED with a DOP of 64.7%, a significant 1.26-fold enhancement was obtained. It was worth mentioning that the DOP was accurately measured via self-built full spatial transverse electric (TE) and transverse magnetic (TM) mode light intensity test system, which was mainly composed of angle resolution bracket, Glan-Taylor prism, and spectrometer. For both TE and TM mode light, the extraction angle inside the semiconductor was extended from conventional (-26 degrees, 26 degrees), (-52 degrees, -41 degrees), (41 degrees, 52 degrees) to (-52 degrees, 52 degrees). Combined with finite difference time domain simulation, it was further confirmed that the novel moth-eye microstructure could notably weaken the total internal reflection at the sapphire/air interface and enlarge the light extraction angle. As a result, compared with the conventional one, DUV-LED with a moth-eye microstructure approximately doubled the light extraction efficiency.