Browsing by Author "Kuo, Jiun-Ming"

Now showing 1 - 3 of 3

ANNEALING TEMPERATURE EFFECT ON THE SENSITIVITY OF SIGE NANOWIRE FOR BIO-SENSOR
(2011)
Chang, Kow-Ming
;
Chen, Chu-Feng
;
Wang, Yu-Bin
;
Liu, Chung-Hsien
;
Kuo, Jiun-Ming
Nanowire is widely used in biological sensor because it has the high surface-to-volume ratio. Germanium (Ge) would be beneficial to enhance the sensitivity of silicon nanowire for bio-sensor. In this study, we have successfully fabricated the SiGe on Insulator (SGOI) nanowires with different annealing temperature by side-wall spacer technique, respectively. The 3-amino-propyltrime-thoxy-silane (APTS) is used to modify the surface, which can connect the bio-linker. Nanowire is considered as a resistance, and the change of conductance (Delta G) and sensitivity (S) of different samples corresponding to APTS treatment were investigated. As annealing temperature was elevated from 800 to 950 degrees C, the SiGe nanowire exhibited increasing sensitivity in the chemical detection. However, it was noted that degradation of sensitivity was observed as the annealing temperature increases up to 1000 degrees C. This behavior may be associated with the reduction of the Ge concentration at the surface of SiGe nanowire due to high-temperature diffusion of Ge in Si. So, temperature is a key parameter in the annealing process producing two effects: repairs of defects and Ge diffusion. There would be an optimal annealing temperature between 900 and 1000 degrees C.
Higher Drive Current for SiGe Nanowires
(2008)
Chang, Kow-Ming
;
Kuo, Jiun-Ming
;
Wu, Heng-Hsin
;
Tzeng, Wen-Hsien
;
Wu, Tzu-liu
Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the Poly-Si and SiGe nanowire with Ge = 7% and 11 % respectively by side-wall spacer technique. In order to normalize the drive current of nanowires, we consider the nanowire as a resistance. The conductance Is chose for comparison between the nanowires. The higher conductance achieved of SlGe nanowire with/without nanowire implantation and the SlGe nanowire with higher Ge concentration had higher conductance. However, the disadvantage of lower contact resistance Is found in SiGe pad. The 3-amino-propyltriethoxy-silane (APTES) was used to modify the surface, which can detect the charge with different pH. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not Increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.
The Ge Enhance the Sensitivity for Bio-Sensor
(2008)
Chang, Kow-Ming
;
Kuo, Jiun-Ming
;
Chao, Wen-Chan
;
Liang, Chia-Jung
;
Wu, Heng-Hsin
Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the N-SiGe nanowire with different Ge concentration by side-wall spacer technique respectively. The 3-amino-propyltrime-thoxy-silane (APTS) was used to modify the surface, which can connect the bio-linker. The conductance of SiGe nanowire Increases owing to APTS with positive charge. The his (sulfosuccinimidyl) suberate sodium (BS3) as the bio-linker connects to APTS, and the conductance decreases because of negative charge. Finally, the protein immunoglobulin G (IGG) is linked to BS3, and the conductance reduces for negative charge. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.