Browsing by Author "Kuo, PF"

Now showing 1 - 2 of 2

Comparative studies on field emission properties of carbon-based materials
(2000-04-01)
Chen, KH
;
Wu, JJ
;
Chen, LC
;
Wen, CY
;
Kichambare, PD
Comparative studies on field emission properties of various carbon-related materials including diamond, amorphous carbon, SiCN films, SiCN nanorods, and carbon nanotubes are presented. While diamond is well known for its potential use in cold cathodes, the emission current of a hydrogen-treated diamond film is relatively small compared to that of amorphous carbon or diamond-like-carbon film. Meanwhile, carbon nanotubes have demonstrated large emission currents at much lower threshold voltages, showing their potential for applications. However, the emission from carbon nanotubes is subjected to significant decay under long-term operation. The emission current and long-term stability can be improved using a new SiCN compound with nanorod morphology. The effective barrier height and the held enhancement factor derived from the Fowler-Nordheim equation are discussed in this paper. (C) 2000 Elsevier Science S.A. All rights reserved.
Field emission from quasi-aligned SiCN nanorods
(2000-05-01)
Tarntair, FG
;
Wen, CY
;
Chen, LC
;
Wu, JJ
;
Chen, KH
We report on the preparation and field emission properties of quasi-aligned silicon carbon nitride (SiCN) nanorods. The SiCN nanorods are formed by using a two-stage growth method wherein the first stage involves formation of a buffer layer containing high density of nanocrystals by electron cyclotron resonance plasma enhanced chemical vapor deposition and the second stage involves using microwave plasma enhanced chemical vapor deposition for high growth rate along a preferred orientation. It should be noted that growth of the SiCN nanorods is self-mediated without the addition of any metal catalyst. Scanning electron microscopy shows that the SiCN nanorods are six-side-rod-shaped single crystals of about 1-1.5 mu m in length and about 20-50 nm in diameter. Energy dispersive x-ray spectrometry shows that the nanorod contains about 26 at. % of Si, 50 at. % of C, and 24 at. % of N. Characteristic current-voltage measurements indicate a low turn-on field of 10 V/mu m. Field emission current density in excess of 4.5 mA/cm(2) has been observed at 36.7 V/mu m. Moreover, SiCN nanorods exhibited rather stable emission current under constant applied voltage. (C) 2000 American Institute of Physics. [S0003-6951(00)01117-7].