Browsing by Author "Kuo, Teng-Fang"

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Intriguing conducting properties of HfOxNy thin films prepared from the Hf[N(C2H5)(2)](4)
(2006-12-18)
Chou, Yi-Hsuan
;
Chiu, Hsin-Tien
;
Kuo, Teng-Fang
;
Chi, Cheng-Chung
;
Chuang, Shiow-Huey
Hafnium nitride films were prepared on the Si(100) substrates by the metal-organic chemical vapor deposition method using Hf[N(C2H5)(2)](4). The prepared samples were then oxidized in air, followed by rapid-thermal annealing to produce HfOxNy thin films, meanwhile the associated physical properties were investigated. The x-ray photoelectron spectroscope analysis unveiled that the composition of the films is HfOxNy. In addition, the films after the rapid-thermal annealing treatments at various temperatures revealed salient features in their physical properties, such as capacitance and conductivity. On this basis, the feasibility of using the HfOxNy layers as high-k dielectrics in complementary metal oxide semiconductor transistors was also discussed. (c) 2006 American Institute of Physics.