Browsing by Author "Kuo, W. C."

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Electrically controllable spontaneous magnetism in nanoscale mixed phase multiferroics
(2011-03-01)
He, Q.
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Chu, Y. -H.
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Heron, J. T.
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Yang, S. Y.
;
Liang, W. I.
Magnetoelectrics and multiferroics present exciting opportunities for electric-field control of magnetism. However, there are few room-temperature ferromagnetic-ferroelectrics. Among the various types of multiferroics the bismuth ferrite system has received much attention primarily because both the ferroelectric and the antiferromagnetic orders are quite robust at room temperature. Here we demonstrate the emergence of an enhanced spontaneous magnetization in a strain-driven rhombohedral and super-tetragonal mixed phase of BiFeO(3). Using X-ray magnetic circular dichroism-based photoemission electron microscopy coupled with macroscopic magnetic measurements, we find that the spontaneous magnetization of the rhombohedral phase is significantly enhanced above the canted antiferromagnetic moment in the bulk phase, as a consequence of a piezomagnetic coupling to the adjacent tetragonal-like phase and the epitaxial constraint. Reversible electric-field control and manipulation of this magnetic moment at room temperature is also shown.
The unconventional doping in YBa2Cu3O7-x/La0.7Ca0.3MnO3 heterostructures by termination control
(2017-01-16)
Tra, V. T.
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Huang, R.
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Gao, X.
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Chen, Y. -J.
;
Liu, Y. T.
In strongly correlated oxides, heterostructures provide a powerful route to manipulate the charge, spin, orbital, and lattice degrees of freedom to create distinctive functionalities. In this work, we have achieved atomically precise interface control in YBa2Cu3O7-x/La0.7Ca0.3MnO3 (YBCO/LCMO) heterostructures and find a hidden effective doping. This mechanism is responsible for higher Tc in the sample with the MnO2-terminated interface than in that with the La0.7Ca0.3O-terminated interface. The MnO2-terminated sample also shows a larger magnetic moment of Mn together with a lower valence state. For more than a decade, the control of T-c in these heterostructures prior to this work has been solely via the variation of YBCO or LCMO thickness. This work hints at an alternative way of exploiting and exploring the interactions between superconductivity and magnetism in this system. Published by AIP Publishing.
Thermal analysis on the degradation of poly-silicon TFTs under AC stress
(2009-08-15)
Weng, C. F.
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Chang, T. C.
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Tai, Y. H.
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Huang, S. T.
;
Wu, K. T.
In this work, the degradation mechanism of N-channel poly-silicon thin-film transistor (poly-Si TFT) has been investigated under dynamic voltage stress at room temperature. The ON-current of TFT is degraded to as low as 0.3 times of the initial value after 1000 s stress. On the other hand, both the sub-threshold swing and threshold voltage kept well during the AC stress. The current crowding effect was rapidly increased with increasing of stress duration. However, comparing the initial and degraded characteristics at rising temperature, namely, 150 degrees C, the ON-current of TFT only decrease to 75% of the initial value after 1000 s AC stress. It depicts that creation of effective trap density in tail-states of poly-Si film is responsible for the electrical degradation of poly-Si TFT. At high temperature, electron has enough energy to pass the energy barrier created by ac stress and the degradation is less obvious. (C) 2009 Published by Elsevier B.V.