Browsing by Author "Kuo, Y. -K."

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Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers
(2009-04-01)
Chen, J. -R.
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Ling, S. -C.
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Huang, H. -M.
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Su, P. -Y.
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Ko, T. -S.
The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron-hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10-15%. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.
Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers
(2007-03-01)
Kuo, Y. -K.
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Chen, J. -R.
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Chen, M. -L.
;
Liou, B. -T.
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光電工程學系
The physical and optical properties of compressively strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers are numerically studied. The simulation results show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAsP quantum wells can be efficiently improved by employing a compressive strain of approximately 1.24% in the InGaAsP quantum wells. The simulation results suggest that the 850-nm InGaAsP/InGaP vertical-cavity surface-emitting lasers have the best laser performance when the number of quantum wells is one, which is mainly attributed to the non-uniform hole distribution in multiple quantum wells due to high valence band offset.