Browsing by Author "Kuo, Yu-Ju"

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2,2 '-Bis(trifluoromethyl)biphenyl as a building block for highly ambient-stable, amorphous organic field-effect transistors with balanced ambipolarity
(2016-01-01)
Chaing, Chi-Jui
;
Chen, Jyh-Chien
;
Kuo, Yu-Ju
;
Tsao, Hsiang-Yen
;
Wu, Kuan-Yi
Novel conjugated polymers, PBPV-TPA, PBPV-CBZ, PBPV-MEH and PBPV-FLO, consisting of trifluoromethyl-substituted biphenyl (2,2'-bis(trifluoromethyl)biphenyl, CF3-BP) as the acceptor with various aromatic donors (triphenylamine TPA, carbazole CBZ, 2-(2-ethylhexyloxy)-5-methoxybenzene MEH and fluorene FLO, respectively) have been successfully synthesized. Their amorphous features, confirmed by wide-angle X-ray scattering, small-angle X-ray scattering and atomic force microscopy, are attributed to lateral side chains on the CBZ, MEH and FLO units, and the propeller geometry of the TPA unit. By integration of CF3-BPs into the polymer backbone, the ambipolarities and well-balanced charge mobilities of OFETs based on these polymers were successfully demonstrated. OFETs based on PBPV-FLO exhibit the highest hole mobility of 0.0152 cm(2) V-1 s(-1) and electron mobility of 0.0120 cm(2) V-1 s(-1). In addition, these OFETs also exhibit annealing-free characteristics and ambient stability. The OFET performance without encapsulation remained nearly unchanged in ambient conditions for up to 90 days. This could be attributed to the enhanced oxidative stability from their relatively deep HOMO energy levels and better moisture resistance from the trifluoromethyl substitution. Considering the ambipolar, annealing-free and ambient-stable properties of these CF3-BP-based amorphous conjugated polymers, the electron-accepting CF3-BP unit can be considered as a promising building block in preparing the easily processable conjugated polymers used in high-stability optoelectronic applications.
2,2 \'-Bis(trifluoromethyl)biphenyl as a building block for highly ambient-stable, amorphous organic field-effect transistors with balanced ambipolarity
(2016-01-01)
Chaing, Chi-Jui
;
Chen, Jyh-Chien
;
Kuo, Yu-Ju
;
Tsao, Hsiang-Yen
;
Wu, Kuan-Yi
Novel conjugated polymers, PBPV-TPA, PBPV-CBZ, PBPV-MEH and PBPV-FLO, consisting of trifluoromethyl-substituted biphenyl (2,2\'-bis(trifluoromethyl)biphenyl, CF3-BP) as the acceptor with various aromatic donors (triphenylamine TPA, carbazole CBZ, 2-(2-ethylhexyloxy)-5-methoxybenzene MEH and fluorene FLO, respectively) have been successfully synthesized. Their amorphous features, confirmed by wide-angle X-ray scattering, small-angle X-ray scattering and atomic force microscopy, are attributed to lateral side chains on the CBZ, MEH and FLO units, and the propeller geometry of the TPA unit. By integration of CF3-BPs into the polymer backbone, the ambipolarities and well-balanced charge mobilities of OFETs based on these polymers were successfully demonstrated. OFETs based on PBPV-FLO exhibit the highest hole mobility of 0.0152 cm(2) V-1 s(-1) and electron mobility of 0.0120 cm(2) V-1 s(-1). In addition, these OFETs also exhibit annealing-free characteristics and ambient stability. The OFET performance without encapsulation remained nearly unchanged in ambient conditions for up to 90 days. This could be attributed to the enhanced oxidative stability from their relatively deep HOMO energy levels and better moisture resistance from the trifluoromethyl substitution. Considering the ambipolar, annealing-free and ambient-stable properties of these CF3-BP-based amorphous conjugated polymers, the electron-accepting CF3-BP unit can be considered as a promising building block in preparing the easily processable conjugated polymers used in high-stability optoelectronic applications.
A new pixel circuit for driving organic light emitting diodes with low temperature polycrystalline thin film transistors
(2005)
Chen, Bo-Ting
;
Kuo, Yu-Ju
;
Pai, Cheng-Chiu
;
Tsai, Chun-Chien
;
Cheng, Huang-Chung
A new active matrix organic light emitting diode (AM-OLED) pixel circuit design, based on the low-temperature polycrystalline thin-film transistors (LTPS-TFTs) is proposed and verified by SPICE simulation. The voltage-programming pixel circuit is formed by five n-type TFTs. one additional control signal, and a storage capacitor. The simulation results show that this pixel circuit has high immunity to the variation of poly-Si TFT characteristics.
A New Pixel Circuit for Driving Organic Light-Emitting Diode With Low Temperature Polycrystalline Silicon Thin-Film Transistors
(2005-09-01)
Tai, Ya-Hsiang
;
Chen, Bo-Ting
;
Kuo, Yu-Ju
;
Tsai, Chun-Chien
;
Chiang, Ko-Yu
A new pixel circuit design for active matrix organic light-emitting diode (AMOLED), based on the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) is proposed and verified by SPICE simulation. Threshold voltage compensation pixel circuit consisting of four n-type TFTs, one p-type TFT, one additional control signal, and one storage capacitor is used to enhance display image quality. The simulation results show that this pixel circuit has high immunity to the variation of poly-Si TFT characteristics.
Investigation of source-follower type analog buffer using low temperature poly-Si TFTs
(2007-03-01)
Chen, Bo-Ting
;
Tai, Ya-Hsiang
;
Wei, Ying-Jyun
;
Wei, Kai-Fang
;
Tsai, Chun-Chien
A new source follower circuit using low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs) as analog buffer for the integrated data driver circuit of active matrix liquid crystal displays (AMLCDs) and active matrix light emitting diodes (AMOLEDs) is proposed and measured. Threshold voltage compensation circuit with two n-type thin film transistors, a capacitor, and four switches structure is used to enhance image quality for the display. The threshold voltage difference of driving TFTs and the unsaturated of output voltage are eliminated in this circuit. An active load is added and a calibration operation is applied to study the effects on the source follower circuit, the transistor operation mode region is also discussed. The proposed circuit is capable of minimizing the variation from both the signal timing and the device characteristics through the simulation and measured results. (C) 2007 Elsevier Ltd. All rights reserved.
New analog buffer circuit using low temperature polycrystalline thin film transistors for active matrix displays
(2005)
Tai, Ya-Hsiang
;
Chen, Bo-Ting
;
Kuo, Yu-Ju
;
Wei, Ying-Jyun
;
Pai, Cheng-Chiu
Two types new simple source follower circuit using low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs) as analogue buffer for the integrated data driver circuit of active matrix liquid crystal displays (AMLCDs) and active matrix light emitting diodes (AMOLEDs) are proposed. Analogue buffer designs are discussed and verified by SPICE simulation results.
New pixel circuits for driving organic light emitting diodes with low temperature polycrystalline Si thin film transistors
(2005)
Cheng, Huang-Chung
;
Chen, Bo-Ting
;
Kuo, Yu-Ju
;
Wei, Ying-Jyun
;
Tsai, Chun-Chien
Two new pixel circuits for active matrix organic light emitting diode (AM-OLED), based on the low-temperature polycrystalline Si thin-film transistors (LTPS-TFTs) are proposed and the Vth compensation ability is verified by SPICE simulation and measured results. The voltage-programming pixel circuits are formed by five TFTs, one additional control signal, and one storage capacitor. The simulation and measured results show that the pixel circuit has high immunity to the variation of poly-Si TFT characteristics.
Source-Follower Type Analog Buffer Using Low Temperature Poly-Si TFTs for AMLCDs
(2006)
Chen, Bo-Ting
;
Tai, Ya-Hsiang
;
Wei, Ying-Jyun
;
Tsai, Chun-Chien
;
Chen, Hsu-Hsin
A new source follower circuit for the integrated circuit of AMLCDs is proposed. Active load is added and calibration operation is applied to compensate the circuits. Proposed circuit is capable of minimizing variation from both timing and device variations through measured results, the uniformity and bias effect are discussed.
Threshold-voltage-compensation methods for AMOLED pixel and analog buffer circuits
(2006-09-01)
Chen, Bo-Ting
;
Tai, Ya-Hsiang
;
Wei, Ying-Jyun
;
Tsai, Chun-Chien
;
Huang, Chun-Yao
New pixel-circuit designs for active-matrix organic light-emitting diodes (AMOLEDs) and a new analog buffer circuit for the integrated data-driver circuit of active-matrix liquid-crystal displays (AMLCDs) and AMOLEDs, based on low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs), were proposed and verified by SPICE simulation and measured results. Threshold-voltage-compensation pixel circuits consisting of LTPS-TFTs, an additional control signal line, and a storage capacitor were used to enhance display-image uniformity. A diode-connected concept is used to calibrate the threshold-voltage variation of the driving TFT in an AMOLED pixel circuit. An active load is added and a calibration operation is applied to study the influences on the analog buffer circuit. The proposed circuits are shown to be capable of minimizing the variation from the device characteristics through the simulation and measured results.