Browsing by Author "Kuo Hao-Chung"

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LATERAL-EPITAXIAL-OVERGROWTH THIN-FILM LED WITH NANOSCALE-ROUGHENED STRUCTURE AND METHOD FOR FABRICATING THE SAME
(2012-11-01)
LEE Chia-Yu
;
Wang Chao-Hsun
;
Chiu Ching-Hsueh
;
Kuo Hao-Chung
The present invention discloses a lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure and a method for fabricating the same. The lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure comprises a substrate, a metal bonding layer formed on the substrate, a first electrode formed on the metal bonding layer, a semiconductor structure formed on the first electrode with a lateral-epitaxial-growth technology, and a second electrode formed on the semiconductor structure, wherein a nanoscale-roughened structure is formed on the semiconductor structure except the region covered by the second electrode. The present invention uses lateral epitaxial growth to effectively inhibit the stacking faults and reduce the thread dislocation density in the semiconductor structure to improve the crystallization quality of the light-emitting layer and reduce leakage current. Meanwhile, the surface roughened structure on the semiconductor structure can promote the external quantum efficiency.
LIGHT EMITTING DEVICE WITH GRADED COMPOSITION HOLE TUNNELING LAYER
(2013-09-05)
WANG Chao-Hsun
;
Kuo Hao-Chung
A light emitting device with graded composition hole tunneling layer is provided. The device comprises a substrate and an n-type semiconductor layer is disposed on the substrate, in which the n-type semiconductor layer comprises a first portion and a second portion. A graded composition hole tunneling layer is disposed on the first portion of the n-type semiconductor layer. An electron blocking layer is disposed on the graded composition hole tunneling layer. A p-type semiconductor layer is disposed on the electron blocking layer. A first electrode is disposed on the p-type semiconductor layer, and a second electrode is disposed on the second portion of the n-type semiconductor layer and is electrical insulated from the first portion of the n-type semiconductor. The graded composition hole tunneling layer is used as the quantum-well to improve the transport efficiency of the holes to increase the light emitting efficiency of the light emitting device.
Light emitting device with graded composition hole tunneling layer
(2014-09-09)
Wang Chao-Hsun
;
Kuo Hao-Chung
A light emitting device with graded composition hole tunneling layer is provided. The device comprises a substrate and an n-type semiconductor layer is disposed on the substrate, in which the n-type semiconductor layer comprises a first portion and a second portion. A graded composition hole tunneling layer is disposed on the first portion of the n-type semiconductor layer. An electron blocking layer is disposed on the graded composition hole tunneling layer. A p-type semiconductor layer is disposed on the electron blocking layer. A first electrode is disposed on the p-type semiconductor layer, and a second electrode is disposed on the second portion of the n-type semiconductor layer and is electrical insulated from the first portion of the n-type semiconductor. The graded composition hole tunneling layer is used as the quantum-well to improve the transport efficiency of the holes to increase the light emitting efficiency of the light emitting device.
Light emitting semiconductor device
(2013-10-22)
Wang Chao-Hsun
;
Li Zhen-Yu
;
Kuo Hao-Chung
A semiconductor light emitting device is disclosed, which comprises: a substrate having a first surface and a second surface; a first semiconductor conductive layer is disposed on the first surface of the substrate; an insert layer is disposed on the first semiconductor conductive layer; an active layer is disposed on the insert layer; a second semiconductor conductive layer is disposed on the active layer; a first electrode is disposed on the second semiconductor conductive layer; and a second electrode is disposed on the second surface of the substrate, in which the electric of the second electrode is opposite to that of the first electrode.
Light emitting semiconductor device
(2012-08-30)
Wang Chao-Hsun
;
Ll Zhen-Yu
;
Kuo Hao-Chung
A semiconductor light emitting device is disclosed, which comprises: a substrate having a first surface and a second surface; a first semiconductor conductive layer is disposed on the first surface of the substrate; an insert layer is disposed on the first semiconductor conductive layer; an active layer is disposed on the insert layer; a second semiconductor conductive layer is disposed on the active layer; a first electrode is disposed on the second semiconductor conductive layer; and a second electrode is disposed on the second surface of the substrate, in which the electric of the second electrode is opposite to that of the first electrode.
Method of forming thin-film structure by oblique-angle deposition
(2011-08-16)
Chang Chia-Hua
;
Yang Chin-Sheng
;
Chiu Ching-Hua
;
Yu Pei-Chen
;
Kuo Hao-Chung
A method of forming thin-film structure by oblique-angle deposition is provided. The method includes the steps of: evaporating target source in a chamber by an electron beam evaporation system, and introducing process gas into the chamber and adjusting tilt angle of the evaporation substrate and controlling temperature in the chamber during evaporation to form thin-film on a evaporation substrate by oblique-angle deposition, and then annealing the evaporation substrate to form a thin-film having porous nanorod microstructure.
SEMICONDUCTOR OPTICAL DEVICE HAVING AN AIR MEDIA LAYER AND THE METHOD FOR FORMING THE AIR MEDIA LAYER THEREOF
(2013-06-13)
LU Tien-Chang
;
Huang Huei-Min
;
Kuo Hao-Chung
;
Wang Shing-Chung
A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.
Semiconductor optical device having an air media layer and the method for forming the air media layer thereof
(2015-03-31)
Lu Tien-Chang
;
Huang Huei-Min
;
Kuo Hao-Chung
;
Wang Shing-Chung
A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.
Solar cell apparatus having the transparent conducting layer with the structure as a plurality of nano-level well-arranged arrays
(2012-03-29)
Tseng Ping-Chen
;
Yu Peichen
;
Kuo Hao-Chung
The invention discloses an apparatus for enhancing light absorption of solar cells and photodetectors by diffraction. The invention comprises the structure as the plurality of nano-level well-arranged arrays with a plurality of certain defect areas including the shapes of rod, tapered-cone, and cone, which diffracts incident light to oblique angles for light trapping. Surface reflection can also be reduced for either broadband or narrow band spectral absorption. The increased contact area between the transparent conducting layer and photoactive layer is beneficial for current extraction, which increases the internal quantum efficiency (IQE).
SOLID STATE LIGHTING LUMINAIRE AND A FABRICATION METHOD THEREOF
(2013-09-05)
Wang Shing-Chung
;
Kuo Hao-Chung
;
Chen Hsin-Chu
;
Chen Kuo-Ju
A solid state lighting luminaire, which comprises a solid state light source, an encapsulated structure, and a first phosphor, is provided. The encapsulated structure encapsulates the solid state light source and has an outside illuminating surface. The first phosphor is patterned to cover a portion of the outside illuminating surface for down-converting the illumination from the solid state light source.
Surface-emitting laser device
(2011-07-05)
Chen Shih-Wei
;
Lu Tien-Chang
;
Kuo Hao-Chung
;
Wang Shing-Chung
A surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nL and disposed on the substrate; a light emitting layered structure with a refractive index nH, where nH>nL, the light emitting layered structure being formed on the low refractive index layer and having first and second semiconductor layers and a multi-quantum well (MQW) disposed between the first and second semiconductor layers and capable of generating photons having a wavelength λ0; and a two-dimensional photonic crystal (2DPC) formed in the light emitting layered structure and having optical nanostructures arranged into a periodic pattern with a lattice constant a. The nanostructures extend from the first semiconductor layer through the MQW. The 2DPC has a normalized frequency, which is defined as a/λ0, ranging from 0.25 to 0.70.
V和W 頻段無線與超寬頻訊號光纖通訊之關鍵元件及技術之研究---子計畫五：以氮化鎵材料及元件應用於次兆赫與兆赫微波光纖通訊
(2010)
郭浩中
;
Kuo Hao-Chung
;
國立交通大學光電工程學系（所）
V和W 頻段無線與超寬頻訊號光纖通訊之關鍵元件及技術之研究---子計畫五：以氮化鎵材料及元件應用於次兆赫與兆赫微波光纖通訊
(2009)
郭浩中
;
Kuo Hao-Chung
;
國立交通大學光電工程學系(所)
V和W 頻段無線與超寬頻訊號光纖通訊之關鍵元件及技術之研究-子計畫五：以氮化鎵材料及元件應用於次兆赫與兆赫微波光纖通訊
(2011)
郭浩中
;
Kuo Hao-Chung
;
國立交通大學光電工程學系（所）
以注入鎖定波長光子晶體量子點面射型雷射二極體為基礎之分波多工被動光纖網路系統
(2006)
郭浩中
;
Kuo Hao-Chung
;
交通大學光電工程研究所
近幾年來，面射型雷射之發展與應用已成為眾人注目之焦點，由於其具有低臨界電流，發散角小，製作成本低…等優點，因此非常適合應用在光纖通訊系統中。在這此的計畫中，我們將發展以GaAs 為基板的高速光子晶體與量子點面射型雷射，並將其應用於分波多工被動光纖網路中。面射型雷射將利用GaAs 為基板，並且分別研究利用InGaAs 量子點以及InGaAsN 量子井作為面射型雷射的主動層，以提供較低的臨界電流值以及較高的特徵溫度。除此之外我們也將利用光子晶體來改善模態輸出特性，使其成為單模輸出之面射型雷射，將非常有潛力成為分波多工被動光纖網路的主要光源。為建構被動光纖網路（PON），它提供光線路終端（OLT）和多個光網絡單元（ONU）的連接，共享局端到客戶端的光纖網路頻寬，WDM-PON 是讓網路的通訊能夠順利進入光纖到家(FTTH)的一個極具優勢的方法。在本計劃中，利用光注入鎖定波長的方法，使得波長得以被選擇輸出，並且利用非歸零碼與歸零碼格式轉換技術，使用於被動分波多工光纖網路系統傳輸與接收之研究。最後，一個整合型注入鎖定波長光子晶體量子點面射型雷射二極體為基礎之分波多工被動光纖網路系統將是我們的最終目標。
以注入鎖定波長光子晶體量子點面射型雷射二極體為基礎之分波多工被動光纖網路系統
(2008)
郭浩中
;
Kuo Hao-Chung
;
國立交通大學光電工程學系(所)
近幾年來，面射型雷射之發展與應用已成為眾人注目之焦點，由於其具有低臨界電流，發散角小，製作成本低…等優點，因此非常適合應用在光纖通訊系統中。在這此的計畫中，我們將發展以GaAs 為基板的高速光子晶體與量子點面射型雷射，並將其應用於分波多工被動光纖網路中。面射型雷射將利用GaAs 為基板，並且分別研究利用InGaAs 量子點以及InGaAsN 量子井作為面射型雷射的主動層，以提供較低的臨界電流值以及較高的特徵溫度。除此之外我們也將利用光子晶體來改善模態輸出特性，使其成為單模輸出之面射型雷射，將非常有潛力成為分波多工被動光纖網路的主要光源。為建構被動光纖網路（PON），它提供光線路終端（OLT）和多個光網絡單元（ONU）的連接，共享局端到客戶端的光纖網路頻寬，WDM-PON 是讓網路的通訊能夠順利進入光纖到家(FTTH)的一個極具優勢的方法。在本計劃中，利用光注入鎖定波長的方法，使得波長得以被選擇輸出，並且利用非歸零碼與歸零碼格式轉換技術，使用於被動分波多工光纖網路系統傳輸與接收之研究。最後，一個整合型注入鎖定波長光子晶體量子點面射型雷射二極體為基礎之分波多工被動光纖網路系統將是我們的最終目標。
以注入鎖定波長光子晶體量子點面射型雷射二極體為基礎之分波多工被動光纖網路系統
(2007)
郭浩中
;
Kuo Hao-Chung
;
國立交通大學光電工程學系(所)
近幾年來，面射型雷射之發展與應用已成為眾人注目之焦點，由於其具有低臨界電流，發散角小，製作成本低…等優點，因此非常適合應用在光纖通訊系統中。在這此的計畫中，我們將發展以GaAs 為基板的高速光子晶體與量子點面射型雷射，並將其應用於分波多工被動光纖網路中。面射型雷射將利用GaAs 為基板，並且分別研究利用InGaAs 量子點以及InGaAsN 量子井作為面射型雷射的主動層，以提供較低的臨界電流值以及較高的特徵溫度。除此之外我們也將利用光子晶體來改善模態輸出特性，使其成為單模輸出之面射型雷射，將非常有潛力成為分波多工被動光纖網路的主要光源。為建構被動光纖網路（PON），它提供光線路終端（OLT）和多個光網絡單元（ONU）的連接，共享局端到客戶端的光纖網路頻寬，WDM-PON 是讓網路的通訊能夠順利進入光纖到家(FTTH)的一個極具優勢的方法。在本計劃中，利用光注入鎖定波長的方法，使得波長得以被選擇輸出，並且利用非歸零碼與歸零碼格式轉換技術，使用於被動分波多工光纖網路系統傳輸與接收之研究。最後，一個整合型注入鎖定波長光子晶體量子點面射型雷射二極體為基礎之分波多工被動光纖網路系統將是我們的最終目標。
具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫
(2009)
郭浩中
;
Kuo Hao-Chung
;
國立交通大學光電工程學系（所）
具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫( I )
(2011)
郭浩中
;
Kuo Hao-Chung
;
國立交通大學光電工程學系（所）
由於石油價格高漲及石化原料燃燒造成的溫室效應，如何更有效率的使用有限的能源是目前最重要、最熱門的研究方向。目前在能源的使用上，先進國家在照明上的能源使用比例都約在20%以上，因此，若是能夠使用更高效率的照明燈具，對節能減碳的實現，有非常顯著的幫助。本整合型計畫將以實現高效率的LED 照明系統為主，結合來自交大、成大和台南大學三所大學共七位教授共同合作，針對整個氮化鎵發光二極體從磊晶、製程到封裝分成三個子計畫進行完整系統性的研究。在子計畫一的磊晶研發方面，將結合交大和成功大學磊晶設備的資源，在奈米級結構上利用HVPE 和MOCVD 等磊晶設備進行再磊晶，提升磊晶品質同時減少GaN LED 效率在高注入下極具降低的情形。在子計畫二的元件製作上，本計畫針對高散熱、高萃取效率的垂直式發光二極體進行研究，其中包括薄膜式、覆晶式和整合HVPE 的新式樣元件結構等。除元件本身製程技術的改進外，由於垂直式GaN LED 相較於傳統的元件結構更容易進行晶圓級製程的整合，因此本整合計畫第三個子計畫便是將垂直式GaN LED 元件與矽基板整合進行晶圓級封裝，導入螢光粉塗佈、晶圓接合，發展低成本的晶圓對晶圓封裝技術。藉由本整合計畫的整合和發展，將能夠發展出一個高效率、低成本的LED 照明系統。
具晶圓級封裝技術之高內部量子效率與低效率下降率之氮化鎵發光二極體開發計畫( II )
(2012)
郭浩中
;
Kuo Hao-Chung
;
國立交通大學光電工程學系（所）
由於石油價格高漲及石化原料燃燒造成的溫室效應，如何更有效率的使用有限的能源是目前最重要、最熱門的研究方向。目前在能源的使用上，先進國家在照明上的能源使用比例都約在20%以上，因此，若是能夠使用更高效率的照明燈具，對節能減碳的實現，有非常顯著的幫助。本整合型計畫將以實現高效率的LED照明系統為主，結合來自交大、成大和台南大學三所大學共七位教授共同合作，針對整個氮化鎵發光二極體從磊晶、製程到封裝分成三個子計晝進行完整系統性的研究。在子計畫一的磊晶研發方面，將結合交大和成大磊晶設備的資源，在奈米級結構上利用HVPE和MOCVD等磊晶設備進行再磊晶，提升磊晶品質同時減少GaN LED效率在高注入下極具降低的情形。在子計畫二的元件製作上，本計畫針對高散熱、高萃取效率的垂直式發光二極體進行研究，其中包括薄膜式、覆晶式和整合HVPE的新式樣元件結構等。除元件本身製程技術的改進外，由於垂直式GaN LED相較於傳統的元件結構更容易進行晶圓級製程的整合，因此本整合計畫第三個子計畫便是將垂直式GaN LED元件與矽基板整合進行晶圓級封裝，導入螢光粉塗佈等製作技術，發展低成本的晶圓對晶圓封裝技術。藉由本整合計畫的整合和發展，將能夠發展出一個高效率、低成本的LED照明系統。