Browsing by Author "LAI, CS"

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POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDE
(1995-11-01)
LAI, CS
;
LEI, TF
;
LEE, CL
;
CHAO, TS
;
電子工程學系及電子研究所
The post-polysilicon gate-process-induced degradation on the underlying gate oxide is studied. The degradation includes an increase in the electron trapping rate and a decrease in the charge-to-breakdown, Q(bd), Of the gate oxide, It is found that N2O nitrided gate oxide is more robust than O-2 gate oxide in resisting the degradation, Also, to grow a thin polyoxide on the polysilicon-gate in N2O rather than in O-2 lessens the degradation on the underlying gate oxide, It is nitrogen, which diffuses through the polysilicon gate and piles up at both polysilicon/oxide and oxide/silicon-substrate interfaces, that improves the oxide quality for the N2O process.
THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O
(1995-09-01)
LAI, CS
;
LEI, TF
;
LEE, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
N2O was used to grow silicon polyoxide. It was found that the N2O-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased, This is opposite to that of conventional O-2-grown polyoxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.