Browsing by Author "LEE, SF"

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DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM 1,1-DIMETHYL-1-SILACYCLOBUTANE
(1992-08-01)
CHIU, HT
;
LEE, SF
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
1,1-Dimethyl-1-silacyclobutane was used as a single-source precursor to deposit SiC thin films on Si(100) and Si(111) by low-pressure chemical vapor deposition (LPCVD). Polycrystalline beta-SiC thin films were grown at temperatures 1100 and 1200-degrees-C. At temperatures between 950 and 1100-degrees-C, amorphous thin films of silicon carbide were obtained. The films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).
DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM DODECAMETHYLCYCLOHEXASILANE
(1991-11-15)
CHIU, HT
;
LEE, SF
;
交大名義發表
;
應用化學系
;
National Chiao Tung University