Browsing by Author "LEE, WF"

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A NEW FABRICATION TECHNOLOGY FOR FIELD-EMISSION TRIODES WITH EMITTER-GATE SEPARATION OF 0.18-MU-M
(1995-01-01)
WANG, CC
;
LEE, WF
;
KU, TK
;
CHEN, MS
;
FENG, MS
A new fabrication technology has been used for field-emission triodes with the emitter-gate separation as small as 0.18 mum to reduce the turn-on and anode voltages. The technology is based on the thermal oxidation of silicon and low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon, making the fabrication of a sub-half-micronmeter gate opening easy and reproducible. The entire process requires use of only one photolithography mask, and does not require advanced high-resolution photolithographic techniques. In this device, the oxidation process serves the three purposes of sharpening the emitters, defining the emitter-gate separation, and achieving a high-quality insulator. The finished devices have the emitter situated exactly at the center of the gate opening due to a self-alignment process. Furthermore, the LPCVD polysilicon film can form gate electrodes with a smooth edge and a small gate opening due to excellent step coverage.