Browsing by Author "LEE, Wei I"

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METHOD FOR GROWING GROUP III-V NITRIDE FILM AND STRUCTURE THEREOF
(2010-10-07)
LEE, Wei I
;
Huang, Hsin Hsiung
;
Chen, Kuei Ming
;
Yeh, Yen Hsien
A method for growing a Group III-V nitride film and a structure thereof are presented. The method is carried out by hydride vapor phase epitaxy (HVPE). The method includes the steps of, inter alia, slowly epitaxially growing a temperature ramping nitride layer on a substrate by rising a first growth temperature of 900-950° C. to a second growth temperature of 1000-1050° C. at a temperature-rising rate of 0.5-10° C./min. The lattice quality of the temperature ramping nitride layer is slowly transformed with the layer height, so that a stress induced by lattice mismatch between a sapphire substrate and a gallium nitride (GaN) layer is relieved.