Browsing by Author "LEE Chia-Yu"

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LATERAL-EPITAXIAL-OVERGROWTH THIN-FILM LED WITH NANOSCALE-ROUGHENED STRUCTURE AND METHOD FOR FABRICATING THE SAME
(2012-11-01)
LEE Chia-Yu
;
Wang Chao-Hsun
;
Chiu Ching-Hsueh
;
Kuo Hao-Chung
The present invention discloses a lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure and a method for fabricating the same. The lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure comprises a substrate, a metal bonding layer formed on the substrate, a first electrode formed on the metal bonding layer, a semiconductor structure formed on the first electrode with a lateral-epitaxial-growth technology, and a second electrode formed on the semiconductor structure, wherein a nanoscale-roughened structure is formed on the semiconductor structure except the region covered by the second electrode. The present invention uses lateral epitaxial growth to effectively inhibit the stacking faults and reduce the thread dislocation density in the semiconductor structure to improve the crystallization quality of the light-emitting layer and reduce leakage current. Meanwhile, the surface roughened structure on the semiconductor structure can promote the external quantum efficiency.
Light Emitting Diode Device Having Super Lattice Structure and a Nano-Structure Layer
(2015-10-08)
LEE Chia-Yu
;
LIN Da-Wei
;
TZOU An-Jye
;
KUO Hao-Chung
A light emitting diode device is provided, which comprises a silicon-based substrate, a buffer layer, a super lattice structure layer, a nano-structure layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The buffer layer is formed on the silicon-based substrate, the super lattice structure layer is formed on the buffer layer, the nano-structure layer is formed on the super lattice structure layer, a first semiconductor layer is formed on the nano-structure layer, and the light emitting layer is formed between the first semiconductor layer and the second semiconductor layer. The super lattice layer and the nano-structure can release the stress within the light emitting diode device, and reduce the epitaxy defect, so that the internal quantum effect and the external quantum effect can be increased.
METHOD FOR FABRICATING A LATERAL-EPITAXIAL-OVERGROWTH THIN-FILM LIGHT-EMITTING DIODE WITH NANOSCALE-ROUGHENED STRUCTURE
(2014-12-04)
LEE Chia-Yu
;
WANG Chao-Hsun
;
CHIU Ching-Hsueh
;
KUO Hao-Chung
A method for fabricating a lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure is provided. The lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure has a substrate, a metal bonding layer formed on the substrate, a first electrode formed on the metal bonding layer, a semiconductor structure formed on the first electrode with a lateral-epitaxial-growth technology, and a second electrode formed on the semiconductor structure. A nanoscale-roughened structure is formed on the semiconductor structure except the region covered by the second electrode. Lateral epitaxial growth is used to effectively inhibit the stacking faults and reduce the thread dislocation density in the semiconductor structure to improve the crystallization quality of the light-emitting layer and reduce leakage current. Meanwhile, the surface roughened structure on the semiconductor structure can promote the external quantum efficiency.