Browsing by Author "LIN, L"

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A CONSTRAINT VARIATION TREATMENT FOR ROTATING NUCLEAR INTRINSIC STATES IN THE LABORATORY SYSTEM
(1994-03-28)
LIN, L
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交大名義發表
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電子物理學系
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National Chiao Tung University
;
Department of Electrophysics
The cranking model describes nuclear rotation in the rotating frame. However, the physical experiments are performed in the laboratory system. In this article, a constraint variation treatment is suggested to generate a set of single particle orbitals with rotational characteristics. By using this set of basis vectors, we can obtain a rotating nuclear intrinsic state which is observed in the laboratory system.
CALCULATION OF GROUND-STATE MOMENTS OF INERTIA AND A MODIFIED CRANKING WAVE-FUNCTION
(1993-02-01)
LIN, L
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交大名義發表
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電子物理學系
;
National Chiao Tung University
;
Department of Electrophysics
It is suggested that, by properly taking the Mottelson-Valatin effect into account in the calculation of the ground-state cranking moments of inertia for heavy deformed nuclei, the theoretical results may be improved. Numerical calculations are reported for the rare-earth nuclei. Some physical features concerning the nature of the cranking model are discussed. A modified cranking wave function is suggested.
CORIOLIS ANTIPAIRING EFFECTS ON GROUND-STATE MOMENTS OF INERTIA
(1992-10-01)
LIN, L
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TSAI, SF
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電子物理學系
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Department of Electrophysics
Anti-pairing effects of the Coriolis force are treated by applying the Bogoliubov transformation in a single-particle basis of the rotating reference system. The approach leads to state dependent anti-pairing forces. In the cranking model approximation, the calculated ground-state moments of inertia show improved agreements with experimental observations for the rare-earth nuclei.
CORIOLIS EFFECTS ON PHONON CORRELATIONS IN THE UNCLEAR CRANKING MODEL
(1990-10-01)
LIN, L
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交大名義發表
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電子物理學系
;
National Chiao Tung University
;
Department of Electrophysics
LABORATORY CRANKING WAVE-FUNCTIONS AND GROUND-STATE MOMENTS OF INERTIA OF HEAVY DEFORMED-NUCLEI
(1995-06-01)
LIN, L
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電子物理學系
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Department of Electrophysics
NOVEL PHENOMENON OF THE AL-1 WT-PERCENT-SI CONTACTS ON THE NF3/AR POST-ETCHING-TREATED N-SI SUBSTRATES
(1993-09-15)
CHENG, HC
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CHEN, YE
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JUANG, MH
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YEN, PW
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LIN, L
Post-etching treatment (PET) using an in situ NF3/Ar low-energy plasma was reported to be efficient in removing the residual layer and defects caused by reactive ion etching (RIE) as well as producing a clean surface conventionally believed suitable for electrical contacts. However, the PET process was found to increase the contact resistance between Al-1 wt%Si and n+-Si substrate for the first time. It is attributed to the formation of p-type-like Si epitaxy on the n+-Si substrate and the lower effective surface donor concentration.