Browsing by Author "LIN, P"

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EFFECTS OF SUBSTRATE-TEMPERATURE AND OXYGEN PARTIAL-PRESSURE ON THE PROPERTIES OF SPUTTERED ZIRCONIUM TITANATE THIN-FILMS
(1995-09-01)
CHANG, DA
;
LIN, P
;
TSENG, TY
;
材料科學與工程學系
;
電子工程學系及電子研究所
We report the effects of substrate temperature and O-2/Ar ratios on the properties of ZrTiO4 thin films prepared by RF magnetron sputtering. The films were deposited at a constant gas pressure (0.133 Pa) with various substrate temperatures (25-450 degrees C) and different O-2/Ar ratios from 0/100 to 20/80. The deposition rate decreases with increasing oxygen partial pressure and substrate temperature. Moreover, the higher O-2 content increases the surface roughness of deposited films, which reduces the transmittance of the films. The effects of substrate temperature and oxygen partial pressure on the stoichiometric composition, optical constant, crystallinity phase, surface morphology, and adhesion have also been systematically investigated.
EFFECTS OF SUBSTRATE-TEMPERATURE AND OXYGEN PARTIAL-PRESSURE ON THE PROPERTIES OF SPUTTERED ZIRCONIUM TITANATE THIN-FILMS
(1995-09-01)
CHANG, DA
;
LIN, P
;
TSENG, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We report the effects of substrate temperature and O-2/Ar ratios on the properties of ZrTiO4 thin films prepared by RF magnetron sputtering. The films were deposited at a constant gas pressure (0.133 Pa) with various substrate temperatures (25-450 degrees C) and different O-2/Ar ratios from 0/100 to 20/80. The deposition rate decreases with increasing oxygen partial pressure and substrate temperature. Moreover, the higher O-2 content increases the surface roughness of deposited films, which reduces the transmittance of the films. The effects of substrate temperature and oxygen partial pressure on the stoichiometric composition, optical constant, crystallinity phase, surface morphology, and adhesion have also been systematically investigated.
GROWTH OF HIGHLY ORIENTED ZRTIO(4) THIN-FILMS BY RADIOFREQUENCY MAGNETRON SPUTTERING
(1994-06-13)
CHANG, DA
;
LIN, P
;
TSENG, TY
;
材料科學與工程學系
;
Department of Materials Science and Engineering
ZrTiO4 thin films on Si(100), metals [Al, Ti and Pt coated on Si(100)] and glass were prepared by radio-frequency magnetron sputter deposition. All films on crystalline substrates exhibited a highly preferred orientation in [020], which were evidenced by the full width at half-maximum (less-than-or-equal-to 0.046-degrees) of the associated rocking curves. The structure of the films on glass, depending on the substrate temperature, was either amorphous or random polycrystalline Good stoichiometric quality and thermal stability have been observed in films on silicon. The X-ray diffraction and transmission electron microscopy selected-area diffraction studies indicated that, after a sequence of annealing up to 650-700-degrees-C, the distributions of Zr and Ti ions in the octahedral cation sites of crystal structure of the films remained disordered.
GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERING
(1994-06-01)
HSIEH, IJ
;
FENG, MS
;
KUO, KT
;
LIN, P
;
材料科學與工程學系
ZnGa2O4 films have been prepared by radio frequency (RF) magnetron sputtering at various total pressure, RF power, and substrate temperatures. Microstructure and crystallographic orientation were characterized by x-ray diffraction Surface morphologies were observed by scanning electron microscope. In addition, cathodoluminescence (CL) measurement was employed to observe the emission spectra of ZnGa2O4 films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 500-degrees-C in this investigation. A blue cathodoluminescent emission peaked at 470 nm was observed. Good luminescent properties were observed in the films which exhibit the standard ZnGa2O4 x-ray diffraction pattern.
OPTICAL-PROPERTIES OF ZRTIO4 FILMS GROWN BY RADIOFREQUENCY MAGNETRON SPUTTERING
(1995-05-01)
CHANG, DA
;
LIN, P
;
TSENG, TY
;
材料科學與工程學系
;
Department of Materials Science and Engineering
THE ROLE OF DRYING-CONTROL CHEMICAL ADDITIVES ON THE PREPARATION OF SOL-GEL DERIVED PLZT THIN-FILMS
(1993-12-15)
CHANG, DA
;
CHOH, YH
;
HSIEH, WF
;
LIN, P
;
TSENG, TY
Films of Pbx/100La(x)/100(Zry/100 Tiz/100)1-x/400O3 with x = 8, y = 65 and z = 35 (PLZT(8/65/35)) with a single perovskite structural phase were successfully prepared by using drying-control chemical additives in sol-gel processing followed by rapid thermal annealing at 600-degrees-C for only 1 min on Si(Pt) substrates. The roles of the drying-control chemical additives ethylene glycol and formamide in the gel preparation were studied. The hysteresis loop of PLZT(8/65/35) thin film was measured. The remanent polarization and coercive field were found to be about 1.3 muC cm-2 and 15 kV cm-1, respectively.