Browsing by Author "LIN, PS"

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A NEW APPROACH TO ANALYTICALLY SOLVING THE TWO-DIMENSIONAL POISSON EQUATION AND ITS APPLICATION IN SHORT-CHANNEL MOSFET MODELING
(1987-09-01)
LIN, PS
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WU, CY
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交大名義發表
;
工學院
;
National Chiao Tung University
A NEW METHODOLOGY FOR DEVELOPING A FAST 2-DIMENSIONAL MOSFET DEVICE SIMULATOR
(1991-06-01)
PERNG, RK
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LIN, PS
;
WU, CY
;
工學院
;
College of Engineering
A new efficient computation scheme using both analytical and numerical techniques has been developed and implemented in a SUbMicron MOS (SUMMOS) simulator. The main features of the proposed scheme are: (1) an efficient grid-partition method and an accurate initial guess technique for the Newton-like method are generated by the developed analytical model through solving the two-dimensional Possion's equation; (2) the accurate source and drain boundary potentials used in the analytical model for a MOSFET with the complicated device structure are provided by a simple model and further refined by a self-improved feedback technique. Comparisons between the initial guess using the analytical model and the final solution are analyzed. In addition, comparisons between the new scheme and the conventional algorithm using the continuation method is made via the number of Newton-iteration and the CPU time, and the superior performance of the new computation scheme is observed. Moreover, it is demonstrated that the SUMMOS simulator with the proposed computation scheme can provide efficient numerical simulation of MOSFET's in CMOS/VLSI.
A NEW SIMPLIFIED 2-DIMENSIONAL MODEL FOR THE THRESHOLD VOLTAGE OF MOSFETS WITH NONUNIFORMLY DOPED SUBSTRATE
(1991-06-01)
LIN, PS
;
WU, CY
;
工學院
;
College of Engineering
A new simplified two-dimensional model for the threshold voltage of MOSFET's is derived in terms of simple characteristic functions. These characteristic functions are transformed from the exact series solution of the two-dimensional Poisson's equation, in which the effects of a nonuniformly doped substrate and a finite graded source-drain junction depth have been included. The attractive features of the developed model are: 1) charge-screening effects are proposed to account for the weak dependence of the threshold voltage on the substrate bias for short-channel MOSFET's, and 2) exact source and drain boundary potentials can be approximated by their equivalent power functions. The accuracy of the simplified 2-D model has been verified by 2-D numerical analysis. Moreover, comparisons between the simplified 2-D model and the experimental results have been made, and good agreement has been obtained for wide ranges of channel lengths, applied substrate, and drain biases.
A QUASI-2-DIMENSIONAL ANALYTICAL MODEL FOR THE TURN-ON CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS
(1990-03-01)
LIN, PS
;
GUO, JY
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WU, CY
;
交大名義發表
;
工學院