Browsing by Author "LIN, YH"

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NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS
(1995-06-01)
LIN, YH
;
LAI, SC
;
LEE, CL
;
LEI, TF
;
CHAO, TS
Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF (+)(2)-implantation is proposed and demonstrated, The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.
RAPID THERMAL-OXIDATION OF LIGHTLY DOPED SILICON IN N2O
(1994)
SUN, SC
;
WANG, LS
;
YEH, FL
;
LAI, TS
;
LIN, YH
SUPPRESSION OF BORON PENETRATION IN PMOS BY USING BRIDE GETTERING EFFECT IN POLY-SI GATE
(1995-02-01)
LIN, YH
;
LEE, CL
;
LEI, TF
;
CHAO, TS
;
電子工程學系及電子研究所
A new stacked poly-Si gate structure with a thin (similar to 20 Angstrom) oxide inserted in-between for p-channel metal-oxide semiconductor feild effect transistor (pMOSFET) application is proposed and demonstrated. Due to the gettering flourine effect of this thin oxide for BF2+-implanted poly-Si gate, the amount of fluorine in the gate oxide, consequently, the boron penetration enhanced by fluorine are reduced. The thicker or the more apart from the gate oxide of this gettering fluorine oxide is, the more effectively it can suppress the boron penetration. Moreover, this new structure improves more the electrical characteristics than the conventional and the stacked layer poly silicon gate structures.
THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS
(1995-05-01)
LIN, YH
;
LEE, CL
;
LEI, TF
;
CHAO, TS
;
電子工程學系及電子研究所
A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF2+ in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.