Browsing by Author "LIN Yueh-Chin"

Now showing 1 - 5 of 5

Enhanced GaN Transistor and the Forming Method Thereof
(2014-11-27)
CHANG Yi
;
LIN Yueh-Chin
;
WANG Huan-Chung
An enhanced GaN transistor is provided. The structure comprises a substrate, a heterostructure, a p-element epitaxy growth layer, a drain ohmic contact and a source ohmic contact disposed on the heterostructure and on two sides of the p-element epitaxy growth layer, a gate structure disposed on the p-element epitaxy growth layer, and is separated from the drain ohmic contact and the source ohmic contact, a surface passivation layer covered the drain ohmic contact, source ohmic contact, and p-element epitaxy growth layer, and covered portion of the gate structure.
III-V METAL-OXIDE-SEMICONDUCTOR DEVICE
(2012-02-09)
CHANG Edward Yi
;
LIN Yueh-Chin
A barrier layer, hafnium oxide layer, between a III-V semiconductor layer and an lanthanum oxide layer is used to prevent interaction between the III-V semiconductor layer and the lanthanum oxide layer. Meanwhile, the high dielectric constant of the lanthanum oxide can be used to increase the capacitance of the semiconductor device.
III-V METAL-OXIDE-SEMICONDUCTOR DEVICE
(2013-06-06)
CHANG Edward Yi
;
LIN Yueh-Chin
A hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer.
Semiconductor Device
(2012-12-13)
CHANG Yi
;
CHANG Chia-Hua
;
LIN Yueh-Chin
;
CHEN Yu-Kong
;
SHIE Ting-En
A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.
Stacked Gate Structure, Metal-Oxide-Semiconductor Including the Same, and Method for Manufacturing the Stacked Gate Structure
(2014-06-05)
LIN Yueh-Chin
;
CHANG Edward Yi
;
CHUANG Ting-Wei
The invention provides a stacked gate structure and metal-oxide-semiconductor including the same, and method for manufacturing the stacked gate structure. The stacked gate structure comprises a substrate, a semiconductor layer positioned on the substrate, a gate dielectric positioned on the semiconductor layer, and a gate electrode layer positioned on the gate dielectric, which the gate dielectric comprises a composite oxide layer composed of lanthanum oxide (La2O3) and hafnium oxide (HfO2).