Browsing by Author "LIOU, TS"

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ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
(1995-08-21)
TSAI, WC
;
CHANG, CY
;
JUNG, TG
;
LIOU, TS
;
HUANG, GW
A model is proposed to estimate the interfacial abruptness of the Si/SiGe heterojunction. In this model, a transition region with linearly graded Ge composition is assumed at the Si/SiGe interface. The Ge composition x of Si/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition at 550 degrees C is found to increase with the deposition time as deposition at the same gas phase composition. This phenomenon can be explained by this model and the fitting results match the measured data. The thickness of the transition region and the transition time can be extracted from these fittings. The transition thicknesses are found to be about 1.9 nm or thinner as grown at 550 degrees C or below. (C) 1995 American Institute of Physics.
CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURE
(1994-10-15)
LIOU, TS
;
WANG, TH
;
CHANG, CY
;
交大名義發表
;
電子工程學系及電子研究所
Hole mobility in strained Si1-xGex/Si(001) layers is calculated as functions of temperature and doping concentration for various Ge contents using a Monte Carlo technique. In the Monte Carlo simulation, the band structure is computed by using a bond orbital model, which combines the k.p and the tight-binding methods with a strain Hamiltonian. The Fermi-Dirac distribution is employed for heavily doped impurity scattering. The alloy interaction potential of 1.0 eV for the Monte Carlo model is obtained by fitting the measured velocity-field characteristics in strained Si1-xGex alloys. The calculated hole mobilities compare well with experimental results. The strain effect on hole transport is also evaluated.
CALCULATION OF THE STRUCTURAL DEPENDENCE OF INFRARED-ABSORPTION IN P-TYPE STRAINED-LAYER SIGE/SI QUANTUM-WELLS
(1995-06-15)
LIOU, TS
;
WANG, TH
;
CHANG, CY
;
交大名義發表
;
電子工程學系及電子研究所