Browsing by Author "LIU, CC"

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ADAPTIVE CONTROL OF NONLINEAR CONTINUOUS-TIME SYSTEMS USING NEURAL NETWORKS - GENERAL RELATIVE DEGREE AND MIMO CASES
(1994)
CHEN, FC
;
LIU, CC
;
電控工程研究所
;
Institute of Electrical and Control Engineering
ADAPTIVE-CONTROL OF NONLINEAR CONTINUOUS-TIME SYSTEMS USING NEURAL NETWORKS GENERAL RELATIVE DEGREE AND MIMO CASES
(1993-08-01)
LIU, CC
;
CHEN, FC
;
交大名義發表
;
電控工程研究所
;
National Chiao Tung University
Multilayer neural networks are used in a non-linear adaptive control problem. The plant is an unknown feedback linearizable continuous-time system with relative degree greater-than-or-equal-to 1. The single-input/single-output system is studied first and then the methodology is extended to control square multi-input/multi-output systems. The control objective is for the plant to track a reference trajectory, and the control law is defined in terms of the outputs of the neural networks. The parameters of the networks are updated on-line according to an augmented tracking error and the network derivatives. A local convergence theorem is given on the convergence of the tracking error. This control algorithm is applied to control a two-input/two-output relative-degree-two system.
ADAPTIVELY CONTROLLING NONLINEAR CONTINUOUS-TIME SYSTEMS USING MULTILAYER NEURAL NETWORKS
(1994-06-01)
CHEN, FC
;
LIU, CC
;
交大名義發表
;
電控工程研究所
;
National Chiao Tung University
Multilayer neural networks are used in a nonlinear adaptive control problem. The plant is an unknown feedback-linearizable continuous-time system. The control law is defined in terms of the neural network models of system nonlinearities to control the plant to track a reference command. The network parameters are updated on-line according to a gradient learning rule with dead zone. A local convergence result is provided, which says that if the initial parameter errors are small enough, then the tracking error will converge to a bounded area. Simulations are designed to demonstrate various aspects of theoretical results.
EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C
(1995-01-09)
LIU, CC
;
LEE, CY
;
CHENG, KL
;
CHENG, HC
;
YEW, TR
ENHANCEMENT OF CRITICAL-CURRENT AND MAGNETIC-FIELD IN A DEFECTED JOSEPHSON TUNNELING JUNCTION
(1995-04-01)
CHOW, TC
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CHOU, H
;
LAI, HG
;
LIU, CC
;
GOU, YS
A Josephson junction with a length of 10 times the Josephson penetration depth (lambda(J)) and a defect size of 0.5 lambda(J) to 2 lambda(J) in different positions has been studied by a mechanical simulation. It was found that the defect modulated the current distribution tremendously when it was near the edge of the junction. A surprising enhancement of the critical current under the field was observed when the defect was located at 0.5 lambda(J) and had a size from 0.5 lambda(J) to 2 lambda(J), which was much larger than the conventional pinning size: the coherent length xi. This effect could be attributed to a self-field, which was either generated by the current itself or by the applied magnetic field, penetrating into the defect smoothly and being pinned at the defect. A repulsive interaction between the self-field and the external field kept any further flux from abruptly penetrating into the junction. The increment in the critical current under the applied field was up to 125% of the original defect-free one. By fitting two defects of the same size of 2 lambda(J) and positioning them at 0.5 lambda(J) to both edges of the junction, the zero field critical current and the critical magnetic field were enhanced up to 150% of a defect-free junction.
MICROCRYSTALLINE beta-SIC GROWTH ON SI BY ECR-CVD AT 500 degrees C
(1995)
CHENG, KL
;
LIU, CC
;
CHENG, HC
;
LEE, CY
;
YEW, TR
MICROCRYSTALLINE SIC FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES
(1995-10-01)
CHENG, KL
;
CHENG, HC
;
LIU, CC
;
LEE, C
;
YEW, TR
The characteristics of microcrystalline silicon carbide (mu c-SiC) films deposited using an electron cyclotron resonance chemical vapor deposition system at low temperatures have been investigated. The effect of microwave (MW) power on the SiC crystallinity is studied. According to the results of Fourier transform infrared absorption spectra, plan-view transmission electron microscopy, and the plasmon loss peaks in X-ray photoelectron spectroscopy, Si-C bonds form when the MW power is above 500 W for deposition at 500 degrees C. The SiC crystallinity improves monotonically with MW power. The amount of incorporated carbon atoms in the grown films increases with MW power up to the concentration of 50% at 1500 W. The dependence of the surface morphology and the mean roughness of the films on MW power is examined using the contact mode atomic force microscopy.
MICROCRYSTALLINE SIC FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES
(1995-10-01)
CHENG, KL
;
CHENG, HC
;
LIU, CC
;
LEE, C
;
YEW, TR
The characteristics of microcrystalline silicon carbide (mu c-SiC) films deposited using an electron cyclotron resonance chemical vapor deposition system at low temperatures have been investigated. The effect of microwave (MW) power on the SiC crystallinity is studied. According to the results of Fourier transform infrared absorption spectra, plan-view transmission electron microscopy, and the plasmon loss peaks in X-ray photoelectron spectroscopy, Si-C bonds form when the MW power is above 500 W for deposition at 500 degrees C. The SiC crystallinity improves monotonically with MW power. The amount of incorporated carbon atoms in the grown films increases with MW power up to the concentration of 50% at 1500 W. The dependence of the surface morphology and the mean roughness of the films on MW power is examined using the contact mode atomic force microscopy.
THE STUDY OF APPARENT NEGATIVE VALUE IN MEASURING DIELECTRIC LOSS
(1982-01-01)
LIU, YN
;
LIU, CC
THE STUDY OF APPARENT NEGATIVE VALUE IN MEASURING DIELECTRIC LOSS
(1982-01-01)
LIU, YN
;
LIU, CC
;
交大名義發表
;
National Chiao Tung University