Browsing by Author "LIU, CS"

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ANALYSIS OF CHATTER VIBRATION IN A CUTTER-WORKPIECE SYSTEM
(1991)
LEE, AC
;
LIU, CS
;
CHIANG, ST
;
交大名義發表
;
機械工程學系
The phenomenon of chatter vibration in milling has been investigated by many authors, but the consideration of workpiece has never been paid any attention to. In this paper, this defect has been excluded by involving workpiece dynamic effect on chatter vibration. A general form of time domain simulation and a simplified form of frequency domain analysis referred as circle criterion will be proposed to examine such a system. The new phenomenon of chatter vibration is derived by both of these methods and experiments also demonstrate the validity of this new phenomenon.
ANALYSIS OF CHATTER VIBRATION IN THE END MILLING PROCESS
(1991)
LEE, AC
;
LIU, CS
;
交大名義發表
;
機械工程學系
;
National Chiao Tung University
This paper continues the work of a previous paper by the authors. A different approach is applied, which adopts frequency domain analysis by linearizing the nonlinear equations to investigate the dynamic behavior in the milling process. A new relationship among the limiting axial depth of cut, workpiece fundamental natural frequency and spindle speed is constructed, and the obtained stable region is also consistent with that of the previous paper.
CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
(1994-10-15)
JUNG, TG
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CHANG, CY
;
LIU, CS
;
CHANG, TC
;
LIN, HC
The unipolar Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition at 550-degrees-C is demonstrated. The dark current density measured at 77 K is (2.5 +/- 0.1) x 10(-7) A/cm2 for the barrier height of 176 +/- 8 meV, at a reverse bias of 1 V. The barrier heights are measured from the activation analysis of the saturation current and compared to the theoretical values. The barrier height decreases as the thickness of the SiGe strained layer exceeds the critical thickness.
DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE
(1992-09-01)
CHEN, CC
;
YU, JL
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LEE, CY
;
LIU, CS
;
CHIU, HT
A new method for preparing thin films of titanium silicide, TiSi2, by chemical vapour deposition of difluorosilylene and titanium tetrachloride is reported.
STUDY OF LOSS MECHANISMS OF MN-ZN FERRITES IN THE FREQUENCY FROM 1 MHZ TO 10 MHZ
(1993-11-01)
TUNG, MJ
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CHANG, WC
;
LIU, CS
;
LIU, TY
;
CHEN, CJ
The core loss mechanism of low loss grade Mn-Zn ferrite in the frequency from 1MHz to 10MHz was investigated in order to find out the possibility of developing Mn-Zn ferrites to be used at such high frequency region. under the condition of f;B=25KHz.T, it was found that dielectric loss dominated the core loss at the frequency between 1.1 and 3MHz, while eddy current loss dominated the core loss at the frequency higher than 3MHz. It is suggested that decrease of grain boundary capacitance and increase of grain resistivity of the core mar be the suitable ways for the Mn-Zn ferrites to be used at such frequency region.