Browsing by Author "LIU, HW"

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HIGH-PERFORMANCE SUPERTHIN OXIDE/NITRIDE/OXIDE STACKED DIELECTRICS FORMED BY LOW-PRESSURE OXIDATION OF ULTRATHIN NITRIDE
(1995-04-01)
LIU, HW
;
SU, HP
;
CHENG, HC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
High-performance superthin oxide/nitride/oxide (O/N/O) stacked dielectrics have been successfully achieved by oxidizing ultrathin nitride films in low-pressure dry oxygen at 850 degrees C for 30 min. The low leakage current and the high reliability of this O/N/O structure are attributed to the growth of the top oxide on the nitride, which is confirmed by Auger electron spectroscopy (AES) depth profiles and step-by-step diluted-HF etching results. The commonly used Net oxidation of the nitrides at atmospheric pressure cannot attain an effective oxide thickness of as low as 46 Angstrom. Furthermore, the dry oxidation of nitrides at atmospheric pressure can only yield a nitride/oxide (N/O) structure, which results in high leakage current. Therefore: our novel technique is promising for future dynamic-random-access-memory (DRAM) technology.
INFLUENCE OF IMPLANT CONDITION ON THE TRANSIENT-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SILICON
(1992-03-15)
JUANG, MH
;
WAN, FS
;
LIU, HW
;
CHENG, KL
;
CHENG, HC
Under high-dosage boron implant, the implant condition was found to be important for reducing the transient-enhanced diffusion of boron in Si and forming shallow p + n junction with good rectifying characteristics as well as high dopant concentration in the diffused region. The BF2+-implantation resulted in not only an excellent dopant activation but also a reduced anomalous diffusion due to the formation of amorphous layer and the scarce defects underneath the amorphous/crystalline (a/c) interface. The B+-implanted crystalline samples manifested a poor activation efficiency, and a largely anomalous diffusion at the high temperature with prolonged-time annealing ascribed to much damage induced by the high-dose implant. The B+-implanted pre-Si+-amorphized samples also displayed severely transient-enhanced diffusion in spite of the good dopant activation.
NOVEL TUNNELING DIELECTRIC PREPARED BY OXIDATION OF ULTRATHIN RUGGED POLYSILICON FOR 5-V-ONLY NONVOLATILE MEMORIES
(1995-06-01)
SU, HP
;
LIU, HW
;
WANG, PW
;
CHENG, PW
;
JEN, IM
A novel dielectric fabricated dy thermal oxidation of ultrathin rugged polysilicon film is proposed for nonvolatile memories, Different roughness degrees for the top and bottom interfaces of this dielectric ate detected by the atomic-force-microscopy (AFM) and high resolution transmission electron microscopy (HRTEM), Due to the microtips formed at the bottom interface of the dielectric, significant improvements in the high conduction efficiency, low trapping rate, good uniformity, and high reliability under positive gate-bias are obtained for the dielectric. Therefore, rugged polyoxide is promising for future 5-V-only floating-gate applications.
SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS
(1995-11-01)
CHANG, HC
;
LIU, HW
;
SU, HP
;
HONG, G
;
奈米中心
High-performance stacked storage capacitors with small effective-oxide-thickness (t(ox),(eff)) as thin as 37 Angstrom has been achieved using low-pressure-oxidized nitride films deposited on NH3-nitrided poly-Si electrodes. The capacitors exhibit excellent leakage property and time-dependent-dielectric-breakdown (TDDB) characteristics. Furthermore, this technique is promising for the 64- and 256-Mb dynamic-random-access-memory (DRAM) applications because the process temperatures never exceed 850 degrees C.
SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS
(1995-11-01)
CHANG, HC
;
LIU, HW
;
SU, HP
;
HONG, G
;
奈米中心
High-performance stacked storage capacitors with small effective-oxide-thickness (t(ox),(eff)) as thin as 37 Angstrom has been achieved using low-pressure-oxidized nitride films deposited on NH3-nitrided poly-Si electrodes. The capacitors exhibit excellent leakage property and time-dependent-dielectric-breakdown (TDDB) characteristics. Furthermore, this technique is promising for the 64- and 256-Mb dynamic-random-access-memory (DRAM) applications because the process temperatures never exceed 850 degrees C.
SUPERTHIN O/N/O STACKED DIELECTRICS FORMED BY OXIDIZING THIN NITRIDES IN LOW-PRESSURE OXYGEN FOR HIGH-DENSITY MEMORY DEVICES
(1994-11-01)
SU, HP
;
LIU, HW
;
HONG, G
;
CHENG, HC
;
電子工程學系及電子研究所
High-performance superthin oxide/nitride/oxide (O/N/O) stacked dielectrics have been successfully achieved by oxidizing thin nitride films in low-pressure dry-oxygen at 850-degrees-C for 30 min. Since the nitrides exhibit a better oxidation resistance to the low-pressure dry-oxygen than to the atmospheric-pressure dry-oxygen and wet-oxygen, the low pressure oxidation obtains a thinner oxidized nitride for the high-density dynamic-random-access-memories (DRAM's) and metal-oxide-nitride-oxide-semiconductor (MONO'S) memory devices. In addition, this dielectric possesses low leakage current and excellent time-dependent-dielectric-breakdown (TDDB) characteristics. Therefore, this novel recipe is promising for future ULSI technology.
SUPPRESSION OF ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON IN SILICON BY LASER PROCESSING
(1992-04-01)
JUANG, MH
;
WAN, FS
;
LIU, HW
;
CHENG, KL
;
CHENG, HC
Anomalous diffusion of ion-implanted boron in silicon has been suppressed by using the laser annealing (LA) technique. For the rapid thermal annealing process, the high-dosage boron implant significantly enhanced the anomalous diffusion of boron in Si largely due to increased density of interstitial clusters. The mechanism that electrically active dopants contribute to diffusion is confirmed. The dopant activation is primarily determined from the heating process rather than the holding time interval. Hence, the optimum annealing regime, attaining high-performance shallow p+-n junctions, is to increase the dopant activation efficiency during the temperature-ramping process as well as to shorten the holding interval. Having an ultrahigh heating rate, the LA technique serves as an excellent annealing scheme to significantly suppress the anomalous diffusion and considerably promote the dopant activation.