Browsing by Author "LIU, HY"

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CREATING A DOCUMENT MANAGEMENT-SYSTEM
(1994)
TARNG, MY
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LIU, HY
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管理科學系
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Department of Management Science
Documentation has endowed us with the practice of putting all our records into file folders with serial modes thus the liability of minding them is generated. We may try to shrink the space and to minimize the labour of document keeping, but the performance of information workers and the people beyond will significantly improve only if we think of the documentation as a corporate fixed asset. As a pioneer of computer-based document management for the Taiwanese Government, the Industrial Development Bureau (IDB) of the Republic of China has enhanced its reputation owing to a high level of performance and user satisfaction at low cost of a computer-based document management system (DMS). Describes some key issues and practical experience on designing, measuring, and justifying a DMS with the innovative use of information technology in the IDB's case. Also provides the steps for guiding decision-making success and the process flow chart for a success and the process flow chart for a DMS. These issues should provide guidance to develop a DMS.
INTERACTIONS BETWEEN AL-1 WT-PERCENT SI THIN-FILM AND W-TI BARRIER LAYER
(1994-05-15)
CHANG, PH
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CHEN, HM
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LIU, HY
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BOHLMAN, JG
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材料科學與工程學系
The interaction of Al-1 wt% Si with a W-Ti barrier layer in the Al/Ti3W7/SiO2/Si system was studied over the temperature range of 400-500-degrees-C for reaction times up to 300 h. The interaction was found to be diffusion-controlled, and to occur in a layer-by-layer fashion. The first reaction product is always Al12W, which forms at the Al/Ti3W7 interface. With excess W in the system, Al will eventually be completely converted to Al12W, and further interactions result in the formation of an Al4W layer at the Al12W/Ti3W7 interface. The amount of Al4W increases at the expense of Al12W. Ti plays a minor role in the interaction and forms a small amount of Al3Ti precipitates in the Al12W matrix. Decomposition of the Ti3W7 pseudoalloy into W and Ti phases is not significant, and is not detected by X-ray diffraction even after annealing at 500-degrees-C for 300 h. The kinetics of the Al12W formation follows a parabolic reaction law with an activation energy of 2.53 eV. The sheet resistance of the film is insensitive to compound formation as long as a continuous Al film exists in the system. The sheet resistance increases dramatically when Al is consumed to the extent that it is no longer a continuous film. The sheet resistance of the Al12W layer is estimated to be 570 mOMEGA square-1.
STRUCTURES OF TANTALUM PENTOXIDE THIN-FILMS FORMED BY REACTIVE SPUTTERING OF TA METAL
(1995-03-15)
CHANG, PH
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LIU, HY
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材料科學與工程學系
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Department of Materials Science and Engineering
Reactively sputtered Ta2O5 films adhere poorly on bare Si substrate, but the adhesion improves dramatically on a thermally oxidized Si surface. The films are non-stoichiometric and the atomic ratio of O to Ta is typically higher than 2.5 but decreases with increasing annealing temperature. The variation in non-stoichiometry is also reflected by a small decrease in lattice constants with increasing annealing temperature as revealed by X-ray diffraction. About 2at% of residual Ar is detected in Ta2O5 film formed by 70%Ar-30%O-2 sputtering. The as-deposited Ta2O5 film is amorphous and it transforms to crystalline Ta2O5 at temperatures higher than 600 degrees C. Crystalline Ta2O5 films contain numerous amorphous particles which have been previously incorrectly identified as voids. They are probably the remnants of the uncrystallized amorphous Ta2O5 materials. The amorphous particles have a bimodal size distribution and the average size increases with increasing annealing temperature. The deterioration of dielectric properties in crystallized Ta2O5 films is unlikely to arise from these amorphous particles because amorphous Ta2O5 is known to have very low leakage current. An interfacial SiO2 layer forms at the Ta2O5-Si interface during reactive sputtering and its thickness increases with increasing oxygen content in the sputtering gas. Annealing at high temperature in Ar ambient has little effect on the thickness of this interfacial SiO2 layer.
THE EFFECT OF SI AND CU ON THE INTERACTIONS BETWEEN AL FILMS AND A TIW BARRIER LAYER
(1992-10-01)
CHANG, PH
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CHEN, HM
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LIU, HY
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材料科學與工程學系
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Department of Materials Science and Engineering
The effect of doping 1 wt % Si or 0.9 wt % Cu to Al films on the interactions between Al and TiW barrier layers at 450-degrees-C was studied. It was found that the first product is always Al12W, which forms at the Al/TiW interface, irrespective of the dopant addition. However, doping 1 wt % Si to Al film enhances the Al12W formation while doping 0.9 wt % Cu retards its formation. With excess tungsten in the system, Al12W would further react with W to form Al/W compounds with higher W content. In pure Al film, both the hexagonal Al5W phase and the monoclinic Al4W phase were detected to form after prolonged annealing at 450-degrees-C. The addition of 1 wt % Si or 0.9 wt % Cu to Al prohibits the formation of Al5W, thus only the Al4W phase was observed at the W/Al12W interface in the doped Al films.
USING INFORMATION TECHNOLOGY FOR SUCCESSFUL DOCUMENT MANAGEMENT-SYSTEMS
(1992-08-01)
LIU, HY
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TARNG, MY
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交大名義發表
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管理科學系
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National Chiao Tung University