Browsing by Author "LIU, LM"

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AN EFFICIENT PRECLEAN OF ALUMINIZED SILICON SUBSTRATE FOR CHEMICAL-VAPOR-DEPOSITION OF SUBMICRON TUNGSTEN PLUGS
(1995-10-01)
YEH, WK
;
TSAI, MH
;
CHEN, SH
;
CHEN, MC
;
WANG, PJ
Preclean of aluminum trench and via patterned substrates is vital for successful selective chemical vapor deposition of tungsten (CVD-W). A convenient preclean method uses in situ. BCl3 plasma etching to remove the native metal oxide prior to conducting the CVD-W. During the plasma etching, however, the outsputtered aluminum oxide and aluminum can be redeposited on the sidewall of the trench and via hole and on the surface of the dielectric layer, where W nucleation is induced, resulting in creep-up and selectivity loss during tungsten deposition. By using a solution of hydroxylamine sulfate to pretreat the aluminum trench and via hole patterned substrates, we successfully avoid the creep-up and selectivity loss of W deposition.
AN EFFICIENT PRECLEAN OF ALUMINIZED SILICON SUBSTRATE FOR CHEMICAL-VAPOR-DEPOSITION OF SUBMICRON TUNGSTEN PLUGS
(1995-10-01)
YEH, WK
;
TSAI, MH
;
CHEN, SH
;
CHEN, MC
;
WANG, PJ
Preclean of aluminum trench and via patterned substrates is vital for successful selective chemical vapor deposition of tungsten (CVD-W). A convenient preclean method uses in situ. BCl3 plasma etching to remove the native metal oxide prior to conducting the CVD-W. During the plasma etching, however, the outsputtered aluminum oxide and aluminum can be redeposited on the sidewall of the trench and via hole and on the surface of the dielectric layer, where W nucleation is induced, resulting in creep-up and selectivity loss during tungsten deposition. By using a solution of hydroxylamine sulfate to pretreat the aluminum trench and via hole patterned substrates, we successfully avoid the creep-up and selectivity loss of W deposition.
CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONS
(1994)
WANG, CK
;
YING, TL
;
WEI, CS
;
LIU, LM
;
CHENG, HC
DIRECT EVIDENCE OF GATE OXIDE THICKNESS INCREASE IN TUNGSTEN POLYCIDE PROCESSES
(1991-11-01)
HSU, SL
;
LIU, LM
;
LIN, MS
;
CHANG, CY
;
電子工程學系及電子研究所
The increase of the "effective" gate oxide thickness for W-polycide processes is studied. The samples with as-deposited and annealed W polycide are analyzed by secondary ion mass spectrometry, transmission electron microscopy (TEM), and high-frequency CV measurements. The TEM cross section shows that the gate oxide thicknesses are approximately 244 and approximately 285 angstrom for as-deposited and 1000-degrees-C annealed samples, respectively. The TEM results agree with that from CV measurements. The TEM analyses provide a direct physical evidence of an additional oxide thickness (approximately 41 angstrom) during the W-polycide annealing.
FIELD INVERSION GENERATED IN THE CMOS DOUBLE-METAL PROCESS DUE TO PETEOS AND SOG INTERACTIONS
(1993-01-01)
HSU, SL
;
LIU, LM
;
FANG, CH
;
YING, SL
;
CHEN, TL
Severe field inversion has been observed in the circuits fabricated by the CMOS double metal process using PETEOS/inorganic SOG/PEOX as the inter-metal dielectrics and PEOX/PECVD nitride as the passivation layer. We have performed detailed studies to conclude that the field inversion is caused by the interaction between PETEOS and non-carbon-based SOG, triggered by the H+ released from PECVD nitride during the sintering. No field inversion is observed when PEOX/inorganic SOG/PEOX is used as the inter-metal dielectrics. The effect of field inversion on the circuit yield is also discussed.
FORECASTING RESIDENTIAL CONSUMPTION OF NATURAL-GAS USING MONTHLY AND QUARTERLY TIME-SERIES
(1991)
LIU, LM
;
LIN, MW
;
管理科學系
;
Department of Management Science
INVESTIGATION OF A HIGH-QUALITY AND ULTRAVIOLET-LIGHT TRANSPARENT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATION
(1995-09-01)
WANG, CK
;
YING, TL
;
WEI, CS
;
LIU, LM
;
電子工程學系及電子研究所
A high quality and ultraviolet-light transparent (UV-transparent) plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiNz) film is developed to form passivation layer for non-volatile memory devices. Comparing to the conventional PECVD SiNx film known to have tensile stress and opacity to ultraviolet-light (UV-light), the proposed SiNz film with very low compressive stress (<1x10(9) dyn/cm(2)) and excellent UV-transmittance (>70% for 1.6 mu m-thick film) can be achieved. The film stress is strongly related to RF input power during deposition process. The UV-transmittance is influenced by pressure and SiH4/NH3 flow ratio. It is also shown that the UV-transmittance is closely correlated to refractive index (RI), film density as well as N/Si ratio inside the film. This SiNx film has been successfully applied to erasable programming read-only memory (EPROM's) devices, and very good UV-erasability and reliability performances are demonstrated.
INVESTIGATION OF A HIGH-QUALITY AND ULTRAVIOLET-LIGHT TRANSPARENT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATION
(1995-09-01)
WANG, CK
;
YING, TL
;
WEI, CS
;
LIU, LM
;
電子工程學系及電子研究所
A high quality and ultraviolet-light transparent (UV-transparent) plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiNz) film is developed to form passivation layer for non-volatile memory devices. Comparing to the conventional PECVD SiNx film known to have tensile stress and opacity to ultraviolet-light (UV-light), the proposed SiNz film with very low compressive stress (<1x10(9) dyn/cm(2)) and excellent UV-transmittance (>70% for 1.6 mu m-thick film) can be achieved. The film stress is strongly related to RF input power during deposition process. The UV-transmittance is influenced by pressure and SiH4/NH3 flow ratio. It is also shown that the UV-transmittance is closely correlated to refractive index (RI), film density as well as N/Si ratio inside the film. This SiNx film has been successfully applied to erasable programming read-only memory (EPROM's) devices, and very good UV-erasability and reliability performances are demonstrated.