Browsing by Author "LIU, TH"

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COMPOSITIONAL DEPENDENCE OF THERMAL-STABILITY OF REFRACTORY-METAL SILICIDE SCHOTTKY CONTACTS TO GAAS
(1989-09-01)
LEE, CP
;
LIU, TH
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WU, SC
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奈米中心
;
Nano Facility Center
NEW OBSERVATION OF CHARGE INJECTION IN MOS ANALOG SWITCHES
(1994-02-03)
CHEN, MJ
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GU, YB
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WU, T
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HSU, PC
;
LIU, TH
Based on experimental analogue MOS switches, the Letter reports a new observation of the charge injection component due to channel charges in weak inversion. As identified by the mixed-mode circuit and device simulations, this new component can contribute comparably to the switch-induced error voltage on a switched capacitor.
TANTALUM SILICIDE SCHOTTKY CONTACTS TO GAAS
(1989-01-15)
LEE, CP
;
LIU, TH
;
LEI, TF
;
WU, SC
;
奈米中心
WEAK INVERSION CHARGE INJECTION IN ANALOG MOS SWITCHES
(1995-05-01)
CHEN, MJ
;
GU, YB
;
WU, T
;
HSU, PC
;
LIU, TH
The on chip test circuit for examining the charge injection in analog MOS switches has been described in detail, and has been fabricated and characterized. Mixed-mode circuit and device simulations have been performed, creating excellent agreements not only with the experimental waveforms but also with the measured switch-induced error voltage, Further investigation of the experimental and simulated results has separated the charge injection into three distinct components: i) the channel charges in strong inversion; ii) the channel charges in weak inversion; and iii) the charges coupled through the gate-to-diffusion overlap capacitance, Important observations concerning the weak inversion charge injection have been drawn from the waveform of the current through the switched capacitor, In this work the channel charges in weak inversion have exhibited a 20% contribution to the switch-induced error voltage on a switched capacitor.