Browsing by Author "LIU SHIH-CHIEN"

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Halbleitervorrichtung und Verfahren zur Herstellung derselben
(2018-06-21)
CHANG EDWARD YI
;
LIU SHIH-CHIEN
;
HUANG CHUNG-KAI
;
WU CHIA-HSUN
;
HAN PING-CHENG
A semiconductor device includes a substrate, a channel layer, a barrier layer, a recess, a charge trapping layer, a ferroelectric material layer, a gate, a source and a drain. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The barrier layer has a recess, and a portion of the barrier layer under the recess has a thickness. The source and the drain are disposed on the barrier layer. The charge trapping layer covers the bottom of the recess. The ferroelectric material is disposed on the charge trapping layer. The gate is disposed on the ferroelectric material.
HIGH ELECTRON MOBILITY GaN-BASED TRANSISTOR STRUCTURE
(2013-07-11)
CHANG EDWARD YI
;
CHANG CHIA-HUA
;
LIN YUEH-CHIN
;
CHEN YU KONG
;
LIU SHIH-CHIEN
A high electron mobility GaN-based transistor structure comprises a substrate, an epitaxial GaN layer formed on the substrate, at least one ohmic contact layer formed on the epitaxial GaN layer, a metallic gate layer formed on the epitaxial GaN layer, and a diffusion barrier layer interposed between the metallic gate layer and the epitaxial GaN layer. The diffusion barrier layer hinders metallic atoms of the metallic gate layer from diffusing into the epitaxial GaN layer, whereby are improved the electric characteristics and reliability of the GaN-based transistor.