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Browsing by Author "LU, JH"

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    A new CMOS current-sensing complementary pass-transistor logic (CSCPTL) for high-speed low-voltage applications
    (1995)
    WU, CY
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    CHENG, KH
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    LU, JH
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    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
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    THE CHARACTERIZATION OF AL2O3 PREPARED BY ANODIC-OXIDATION
    (1993-06-01)
    YEH, CF
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    CHENG, JY
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    LU, JH
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    交大名義發表
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    電控工程研究所
    Aluminum is a good candidate of low resistivity metal as a gate electrode metal and a gate bus-line metal in amorphous silicon thin-film transistor of liquid crystal display. But it easily brings about hillocks and whiskers during the heat process, and causes defects. Al2O3 formed on aluminum layer is expected to work as a protective layer against hillock formation. The formation of Al2O3 is developed by anodic oxidation method. The electrical characteristics of Al2O3 layers formed at constant DC anodic bias or constant DC current density were investigated. The optimal growth condition of Al2O3 has been developed. In addition, the double-layer of Al2O3/SiN is also shown to be sufficiently protective against hillock formation.