Browsing by Author "LU, JP"

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CAPACITIVELY COUPLED SI STRIP DETECTORS ON A 100 MM WAFER
(1994-03-15)
YEH, SC
;
SU, S
;
LU, JP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Silicon strip detectors with single-sided readout were designed and processed on 100 mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by electrical measurements. A 200 nm gate oxide thickness was chosen to provide a coupling capacitance of 9.75 pF/cm. A full depletion voltage of 80 V and leakage currents of 0.29, 0.64, 0.97, and 1.01 nA/strip for strip lengths of 2, 5, 7, and 8 cm, respectively were measured.