Browsing by Author "Lai, C. M."

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Scheduling integrated circuit assembly operations on die bonder
(2007-04-01)
Pearn, W. L.
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Chung, S. H.
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Lai, C. M.
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工業工程與管理學系
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Department of Industrial Engineering and Management
Solving the integrated circuit (IC) assembly scheduling problem (ICASP) is a very challenging task in the IC manufacturing industry. In the IC assembly factories, the jobs are assigned processing priorities and are clustered by their product types, which must be processed on groups of identical parallel machines. Furthermore, the job processing time depends on the product type, and the machine setup time is sequentially dependent on the orders of jobs processed. Therefore, the ICASP is more difficult to solve than the classical parallel machine scheduling problem. In this paper, we describe the ICASP in detail and formulate the ICASP as in integer programing problem to minimize the total machine workload. An efficient heuristic algorithm is also proposed for solving large-scale problems.
The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers
(2006-12-14)
Shu, G. W.
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Wang, C. K.
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Wang, J. S.
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Shen, J. L.
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Hsiao, R. S.
The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs.
Wire-like characteristics in stacked InAs/GaAs quantum dot superlattices for optoelectronic devices
(2007-09-01)
Chen, T. T.
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Chen, Y. F.
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Wang, J. S.
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Huang, Y. S.
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Hsiao, R. S.
The wire-like characteristics of stacked InAs/GaAs quantum dot (QDs) superlattices induced by the vertically electronic coupling effect were demonstrated by surface photovoltaic and photoluminescence measurements. It was found that the surface photovoltaic signal can be enhanced by up to more than 100 times due to the wire-like behavior along the growth direction. We also found that the emission from the cleaved edge surface is strongly anisotropic, which suggests a possibility of fine tuning the polarization by changing the spacer thickness. Additionally, the electroluminescence of stacked QDs near 1.3 mu m based on the wire-like characteristics has a much better performance than that of uncoupled QDs.