Browsing by Author "Lai, Chun-Ning"

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Nanosized-Metal-Grain-Induced Characteristic Fluctuation in Gate-All-Around Si Nanowire Metal-Oxide-Semiconductor Devices
(2015)
Lai, Chun-Ning
;
Chen, Chien-Yang
;
Li, Yiming
;
電信工程研究所
;
Institute of Communications Engineering
In this work, we investigate workfunction (WK) fluctuation of gate-all-around Si nanowire MOS devices by solving a sets of 2D Schrodinger-Poisson equations. We discuss characteristic fluctuation in view of randomly interactive quantum confinement with subbands and wavefunctions. The influences of metal-grain size and channel width on the random WK-induced characteristic fluctuation are studied; additionally, the random positions of metal grain are discussed. The WK of metal grain in the corner of square-shaped channel possesses greater impact on characteristic fluctuation because of enhanced corner effect. Devices with a large channel width and small nanosized metal grains suffer from relatively smaller percentage of fluctuation.
Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFET Devices
(2015)
Li, Yiming
;
Chang, Han-Tung
;
Lai, Chun-Ning
;
Chao, Pei-Jung
;
Chen, Chieh-Yang
In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-kappa/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally calibrated device simulation are studied. The small aspect ratio device has greater immunity of RDF, while suffers from PVE and WKF.