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Browsing by Author "Lai, D"

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    NBTI effects of pMOSFETs with different nitrogen dose imlantation
    (2004)
    Lee, YJ
    ;
    Tang, LC
    ;
    Wu, MH
    ;
    Chao, TS
    ;
    Ho, PT
    NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and I-CP were measured simultaneously. Reduction of DeltaV(TH) and I-CP after positive gate bias stressing is related with the recovery of interface states.