Browsing by Author "Lai, Erb-Kun"

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A 2-bit/cell, maskless, self-aligned resistance memory with high thermal stability
(2007)
He, ChiaHua
;
Lee, Ming-Daou
;
Pan, Chen-Ling
;
Lai, Erb-Kun
;
Yao, Yeong-Der
We report the first demonstration of a multilevel cell (MLC) resistance device using a self-aligned WO, film prepared by plasma oxidation. The 2-bit/cell operation is achieved by applying a series of 1.5V programming pulses. The device shows high thermal stability and good data retention. The resistance change can be attributed to variable-range hopping and Ohmic transport mechanisms. This device has the potential for future low-voltage, 3-dimentioanl nonvolatile memory with multiple bits per layer. In addition, no additional mask is needed to form the self-aligned device.