Browsing by Author "Lai, F"

Now showing 1 - 2 of 2

Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
(2004-11-15)
Lai, F
;
Chang, YH
;
Hsueh, TH
;
Huang, HW
;
Laih, LH
We demonstrated the enhancement in the performance of proton-implanted GaAs VCSEL by incorporation of a new p-contact scheme using a Ti and ITO transparent overcoating on the regular p-contact. The kink characteristics in light output power versus current (L-I) curve of the VCSEL with the Ti/ITO overcoating were improved with a reduction in the derivative kink factor of as large as 70%. The high-speed response of the overcoated device also shows a more open clear eye and lower jitter of 35 ps operating at 2.125 Gb/s under 10 mA bias and 9 dB extinction ratio compared to the no overcoated device. Better current spreading and uniformity induced by the overcoating could be responsible for these performance improvements. (C) 2004 Elsevier B.V. All rights reserved.
Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dB
(2006-03-01)
Chang, YH
;
Peng, PC
;
Tsai, WK
;
Lin, G
;
Lai, F
We present monolithic quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs) operating in the 1.3-mu m optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is similar to 330 mu W with slope efficiency of 0.18 W/A at room temperature. Single-mode operation was obtained with a sidemode suppression ratio of > 30 dB. The modulation bandwidth and eye diagram in 2.5 Gb/s was also presented.