Browsing by Author "Lai, KH"

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Coupled-structure erbium-doped fiber amplifier with 94-nm bandwidth
(2005-05-01)
Lai, KH
;
Yeh, CH
;
Chi, S
;
光電工程學系
;
Department of Photonics
A novel S- to C-band erbium-doped fiber amplifier (EDFA) module over a 94-nm operation wavelength from 1476 to 1570 nm is experimentally investigated and demonstrated. This proposed module composes an S-band EDFA and a C-band erbium-doped waveguide amplifier (EDWA) with a coupled-structure. The 31.4-dB peak gain with 5.6-dB noise figure, and 30.5-dB peak gain with 4.7-dB noise figure are observed at 1506 and 1534 nm in this configuration when the input signal power is -30 dBm, respectively. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
Gain-clamped erbium-doped waveguide amplifier module with fiber Bragg grating using optical feedback
(2005-06-01)
Lai, KH
;
Chi, S
;
光電工程學系
;
Department of Photonics
A gain-clamped C-band EDWA module using forward optical feedback with a fiber Bragg grating (FBG) over the operating range of 1530 to 1560nm has been experimentally investigated and demonstrated. A 0.3dB minimum gain variation is observed at 1550nm over a 10dBm variation of the input signal power. In addition, the gain clamping behaviors have also been experimentally investigated under different operating conditions.
Hybrid L-band optical fiber amplifier module with erbium-doped fiber amplifiers and semiconductor optical amplifier
(2004-08-01)
Yeh, CH
;
Lai, KH
;
Huang, YJ
;
Lee, CC
;
Chi, S
We propose and experimentally demonstrate a new hybrid three-stage L-band fiber amplifier module composed of a semiconductor optical amplifier and two erbium-doped fiber amplifiers over the gain bandwidth of 1540 to 1600 nm. This proposed amplifier also provides a broadband amplified spontaneous emission light source.
Hybrid three-stage C- plus L-band optical fiber amplifier in cascade configuration
(2005-05-01)
Yeh, CH
;
Lai, KH
;
Lee, CC
;
Chi, S
;
光電工程學系
A hybrid C- plus L-band fiber amplifier module with three amplifier stages, which provides an operation range of 1540 to 1600 nm, is proposed and experimentally demonstrated. The proposed amplifier consists of two erbium-doped fiber amplifier (EDFAs) and a semiconductor optical amplifier (SOA) in cascade. Compared with a traditional L-band EDFA having longer EDF length, this amplifier can reduce the total EDF length to 44 m. As a result, 41.5 dB gain and a 3.7-dB noise figure are achieved at 1562 nm over the bandwidth of 1540 to 1600 nm, while the input signal power is -30 dBm. In addition, the behavior and performance of the proposed gain-clamping amplifier module over the C-plus L-band is investigated experimentally under different operation conditions. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
Simultaneously gain-flattening and gain-clamping technique for erbium-doped fiber amplifiers by backward injection of a Fabry-Perot laser light
(2004-07-01)
Yeh, CH
;
Lai, KH
;
Lee, CC
;
Chi, S
;
光電工程學系
An active control technique of obtaining simultaneously gain-flattened and gain-clamped spectra for erbium-doped fiber amplifiers (EDFA) has been proposed and experimentally demonstrated by injecting Fabry-Perot (F-P) laser light into the EDFA. In the demonstration, our EDFA module could simultaneously reduce gain variation from 10.8 dB to 1.1 dB for a 10 dB input power change and reduce gain flatness from 11.6 dB to 2.0 dB over the operating wavelength range of 1528 nm to 1560 nm.
Stable and wavelength-tunable erbium-doped fiber double-ring laser in S-band window operation
(2005-05-01)
Chien, HC
;
Yeh, CH
;
Lai, KH
;
Lee, CC
;
Chi, S
A stable and tunable S-band erbium-doped fiber (EDF) double-ring laser has been proposed and experimentally demonstrated. Based on the double-ring configuration, the EDF ring laser exhibits more stable output wavelengths and powers than those of the single-ring. Wide tunable range of 1484-1518 nm, the side-mode suppression ratio (SMSR) of larger than 44.7 dB/0.05 nm and the output power of larger than -2.2 dB in over the operation range of 1484-15 10 nm have been retrieved. (c) 2005 Elsevier B.V. All rights reserved.
Suppression of boron penetration in P+-poly-SiGe gate p-channel metal-oxide-semiconductor field-effect transistor using NH3-nitrided and N2O-grown gate oxides
(2004-11-01)
Yang, WL
;
Chao, TS
;
Lai, KH
;
電子物理學系
;
Department of Electrophysics
High-performance p(+)-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide'instead of the conventional O-2-grown oxide. It is found that NH3-nitrided or N2O-grown oxide can suppress boron penetration in the p(+)-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.