Browsing by Author "Lai, Wen-Wei"

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Impact of Ferroelectric Domain Switching in Nonvolatile Charge-Trapping Memory
(2017-01-01)
Fan, Chia-Chi
;
Chiu, Yu-Chien
;
Liu, Chien
;
Liou, Guan-Lin
;
Lai, Wen-Wei
In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (similar to 800ns) is more than three orders of magnitude faster than that of control trapping type.
Program/Erase Speed and Data Retention Trade-Off in Negative Capacitance Versatile Memory
(2017-01-01)
Fan, Chia-Chi
;
Chiu, Yu-Chien
;
Liu, Chien
;
Liou, Guan-Lin
;
Lai, Wen-Wei
In this work, we investigated the performance tradeoff between program/erase speed and data retention of ferroelectric HfZrO memory. The monoclinic HfNO layer with a trapping mechanism was employed to improve the data retention. Under the thickness optimization of HfNO, the HfZrO/HfNO gate stack can be functionalized with volatile and non-volatile operation.