Browsing by Author "Lai, Yin-Chieh"

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110 GHz hybrid mode-locked fiber laser with enhanced extinction ratio based on nonlinear silicon-on-insulator micro-ring-resonator (SOI MRR)
(2016-03)
Liu, Yang
;
Hsu, Yung
;
Chow, Chi-Wai
;
Yang, Ling-Gang
;
Yeh, Chien-Hung
We propose and experimentally demonstrate a new 110 GHz high-repetition-rate hybrid mode-locked fiber laser using a silicon-on-insulator microring-resonator (SOI MRR) acting as the optical nonlinear element and optical comb filter simultaneously. By incorporating a phase modulator (PM) that is electrically driven at a fraction of the harmonic frequency, an enhanced extinction ratio (ER) of the optical pulses can be produced. The ER of the optical pulse train increases from 3 dB to 10 dB. As the PM is only electrically driven by the signal at a fraction of the harmonic frequency, in this case 22 GHz (110 GHz/5 GHz), a low bandwidth PM and driving circuit can be used. The mode-locked pulse width and the 3 dB spectral bandwidth of the proposed mode-locked fiber laser are measured, showing that the optical pulses are nearly transform limited. Moreover, stability evaluation for an hour is performed, showing that the proposed laser can achieve stable mode-locking without the need for optical feedback or any other stabilization mechanism.
2.6 Tbit/s On-Chip Optical Interconnect Supporting Mode-Division-Multiplexing and PAM-4 Signal
(2018-06-01)
Hsu, Yung
;
Chuang, Chun-Yen
;
Wu, Xinru
;
Chen, Guan-Hong
;
Hsu, Chin-Wei
In this letter, we combine the use of dense-wavelength-division-multiplexing and mode-division-multiplexing (MDM) with advanced-modulation formats for on-chip optical interconnects. A three-mode MDM multiplexer (MUX) and de-multiplexer (DEMUX) was designed and used. Each wavelength carrier had an aggregate data rate of 192-Gbit/s using 4-level pulse-amplitude-modulation. The mode crosstalk of the MDM MUX/DEMUX was measured to he below -20 dB in the 40-nm wavelength band from 1520 to 1560 nm. Fourteen wavelength channels are multiplexed and successfully transmitted with an aggregate transmission capacity of 2.6 Tbit/s (14 wavelengths x 3 modes x 64 Gbit/s) with all channels satisfying the hard-decision forward-error-correction threshold. Numerical analysis of the mode crosstalk is also performed.
3D Ferroelectric-like NVM/CMOS Hybrid Chip by sub-400 degrees C Sequential Layered Integration
(2012-01-01)
Lien, Yu-Chung
;
Shieh, Jia-Min
;
Huang, Wen-Hsien
;
Hsieh, Wei-Shang
;
Tu, Cheng-Hui
For the first time, a sequentially processed 3D hybrid chip is demonstrated by stacking low-temperature (LT) Ferroelectric-like (FE-like) metal-oxide nonvolatile memory (NVM) and CMOS. The high-mobility (333 and 113 cm(2)/V-s) and low-subthreshold swing (97 and 112 mV/decade) N/P-type thin film transistors (TFTs) construct stacked inverters showing sharp transfer characteristic as the fundamental element of CMOS array and stacked 3D NVMs. The sequential layered integration is enabled by cutting-edge low thermal-budget plasma/laser processes and self-assembled FE-like metal-oxide materials. The implementation of sub-400 degrees C new-type metal-ion (Eu+3)-mediated atomic-polar-structured (Eu+3-APS) dielectric realizes stackable FE-like NVMs with program speed of 100 nanosecond, toward future 3D layered CMOS with giant high-speed dat-storage application era.
DISPLACEMENT MEASUREMENT SYSTEM AND METHOD THEREOF
(2010-11-11)
Hsu, Kuei-Chu
;
Chen, Chii-Chang
;
Chan, Chia-Hua
;
Lai, Yin-Chieh
A displacement measurement system including a coherent light source, a two-dimensional grating, a photo sensor, and a signal processing apparatus is provided. After the coherent light beam enters the two-dimensional grating, a zero-order light beam and a plurality of first-order diffraction beams are generated. The zero-order light beam interferes with two of the first-order beams in different directions, so that corresponding interference fringes are formed on the photo sensor. Accordingly, when the two-dimensional grating moves, displacements of the two-dimensional grating in the different directions are obtained by calculating phase differences of the interference fringes in the corresponding directions. Besides, when the two-dimensional grating rotates, the rotational angle of the two-dimensional grating is obtained from the corresponding rotational angle of a diffraction pattern of the first-order diffraction beams.
Influences of silicon nano-crystallized structures on the optical performance of silicon oxynitride rib-type waveguides
(2008-12-01)
Liu, Wen-Jen
;
Lai, Yin-Chieh
;
Weng, Min-Hang
;
光電工程學系
;
Department of Photonics
Silicon oxynitride (SiON) films were deposited on p-type (100) silicon substrates by plasma enhanced chemical vapor deposition (PECVD), at the temperature of 300 degrees C, using silane (SiH(4)), nitrogen (N(2)) ammonia (NH(3)) and laughing gas (N(2)O) as gas precursors. The effects of the processing gas ratio of N(2)O/(N(2)+NH(3)) on the optical properties, microstructure and chemical bonding evolutions of SiON material, and the influences of silicon nano-crystallized structures on the optical performance of SiON-based rib-type optical waveguides were studied. Microstructure evolutions analysis and optical measurements indicated that the refractive index and the extinction coefficient could be precisely determined by controlling the N(2)O/(N(2)+NH(3)) ratio and the thermal annealing process. A greater density and dimension of silicon nanocrystallized structures resulted in more optical scattering effect phenomena occurring between the interface of silicon nano-crystallized structure and SiON matrix and more optical propagation loss. (C) 2008 Elsevier B.V. All rights reserved.
Long-length fiber Bragg creating sequential UV writing by probing phase mask
(2009-08-20)
Hsu, Kuei-Chu
;
Lai, Yin-Chieh
;
Hsin, Chen-Wei
A new fiber position monitoring method for sequential FBG UV-writing processes with a reference phase mask as the phase reference is proposed. Also, the new method by probing a reference phase mask can overcome the optical alignment difficulties in using reference fiber as well as provide more signal power for achieving better monitoring accuracy. Moreover, the present invention provides a method for sequentially joining a plurality of grating sections into a fiber grating longer than a phase mask.
Monolithic 3D Chip Integrated with 500ns NVM, 3ps Logic Circuits and SRAM
(2013)
Shen, Chang-Hong
;
Shieh, Jia-Min
;
Wu, Tsung-Ta
;
Huang, Wen-Hsien
;
Yang, Chih-Chao
For the first time, a sequentially processed sub-50nm monolithic 3D IC with integrated logic/NVM circuits and SRAM is demonstrated using multiple layers of ultrathin-body (UTB) MOSFET-based circuits interconnected through 300nm-thick interlayer dielectric (ILD). High-performance sub-50nm UTB MOSFETs using deposited ultra-flat and ultra-thin (20nm) epi-like Si enable across-layer and in-layer high-speed 3ps logic circuits and 1-T 500ns plasma-MONOS NVMs as well as 6T SRAMs with static noise margin (SNM) of 280 mV and reduced footprint by 25%. Closely stacked monolithic 3D circuits envision advanced high-performance, rich function, and low power intelligent mobile devices.
Narrow line-width single-longitudinal-mode fiber laser using silicon-on-insulator based micro-ring-resonator
(2016-02)
Liu, Yang
;
Hsu, Yung
;
Hsu, Chin-Wei
;
Yang, Ling-Gang
;
Chow, Chi-Wai
In this work, we propose and demonstrate a stable single-longitudinal-mode (SLM) fiber laser with narrow line-width by using an integrated silicon-on-insulator micro-ring resonator (SOI MRR) and two subsidiary fiber rings for the first time, to the best of our knowledge. The laser is tunable over the wavelength range from 1546 to 1570 nm, with only step tuning of 2 nm steps. A maximum 49 dB side mode suppression ratio (SMSR) can be achieved. The compact SOI MRR provides a large free-spectral-range (FSR), while the subsidiary rings provide Vernier effect producing a single lasing mode. The FSR of the SOI MRR can be very large and controllable (since it is easy to fabricate small SOI MRR when compared with making small fiber-rings) using the complementary-metal-oxide-semiconductor (CMOS) compactable SOI fabrication processes. In our proposed laser, the measured single side-band (SSB) spectrum shows that the densely spaced longitudinal modes can be significantly suppressed to achieve SLM. The laser linewidth is only 3.5 kHz measured by using the self-heterodyne method. 30 min stability evaluation in terms of lasing wavelength and optical power is performed; showing the optical wavelength and power are both very stable, with fluctuations of only 0.02 nm and 0.8 dB, respectively.
Zone plate tilt study in transmission X-ray microscope system at 8-11 keV
(2009)
Chao, Fu-Han
;
Yin, Gung-Chian
;
Liang, Keng S.
;
Lai, Yin-Chieh
;
光電工程學系
Zone plate [1] has been used as a focal lens in transmission X-ray microscope (TXM) optical system in recent decades [2, 3]. In TXM of NSRRC[4,5], the thickness of zone plate is about 900nm and the width of its out most zones is 50nm, which has a high aspect ratio 18. When zone plate is tilted, the image quality will be affected by aberration. Since the aspect ratio of zone plate is large, for incident beam, the shape of zone plate's transmission function will look different when zone plate is tilted. The both experimental and simulation result will be shown in this present. A five axes stage is designed and manufactured for the zone plate holder for three dimensional movement, tip and tilt. According to Fourier theory, we can calculate the wave distribution on image plane, if we know the original wave function, the distances between each element, and the transparencies of the sample and zone plate. A parallel simulation process code in MATLAB is developed in workstation cluster with up to 128Gbytes memory. The effects of aberration generated by tilt effect are compared from the experimental data and simulation result. A maximum tilt angle within the acceptable image quality is calculated by simulation and will be verified by experiment.