Browsing by Author "Lai, Yu-Chien"

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Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications
(2015-06)
Hsu, Hsiao-Hsuan
;
Chiou, Ping
;
Cheng, Chun-Hu
;
Yen, Shiang-Shiou
;
Tung, Chien-Hung
This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of <5 V, a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade, and a high mobility of 13.7 cm(2)/V s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.
Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors
(2015-09-15)
Hsu, Hsiao-Hsuan
;
Yen, Shiang-Shiou
;
Chiu, Yu-Chien
;
Chiou, Ping
;
Chang, Chun-Yen
A low off-state current of 1.6 x 10(-14) A/mu m and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c-axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 degrees C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga-O bonds to reduce oxygen vacancies, and the c-axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary. (C) 2015 Elsevier B.V. All rights reserved.
Polarizing terahertz waves with nematic liquid crystals
(2008-06-01)
Hsieh, Cho-Fan
;
Lai, Yu-Chien
;
Pan, Ru-Pin
;
Pan, Ci-Ling
;
電子物理學系
A Feussner-type terahertz polarizer with a nematic liquid crystal (NLC) layer between two fused-silica prisms is demonstrated. The polarization factor and extinction ratio of the NLC-based terahertz polarizer can exceed 0.99 and 10(-5), respectively. (C) 2008 Optical Society of America.
Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel
(2015-04-01)
Yen, Shiang-Shiou
;
Hsu, Hsiao-Hsuan
;
Chiou, Ping
;
Cheng, Chun-Hu
;
Tung, Chien-Hung
In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high-and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 degrees C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 x 10(-14)A/mu m at a low operating voltage of 4V. (C) 2015 The Japan Society of Applied Physics
STRUCTURE OF POLARIZING TERAHERTZ WAVE DEVICE
(2010-03-04)
CHAO, Ru-Pin
;
Pan, Ci-Ling
;
Hsieh, Cho-Fan
;
Lai, Yu-Chien
The Terahertz Polarizer structure of the present invention comprises of: A pair of parallel quartz layers for forming a rectangular cube with internal space, then a birefringent liquid crystal is placed in the internal space and sealed, and a pair of permanent magnets with reverse polarities are placed at both sides of the pair of fused silica layers.