Browsing by Author "Lai Ming-Fang"
Now showing 1 - 3 of 3
- Results Per Page
- Sort Options
Item type:Item, ESD PROTECTION STRUCTURE FOR 3D IC(2012-06-21) ;Chen Kuan-Neng ;Lai Ming-FangChen Hung-MingAn electrostatic discharge (ESD) protection structure for a 3D IC is provided. The ESD protection structure includes a first active layer, a through-silicon via (TSV) device and a second active layer. The TSV is disposed in the first active layer, and the second active layer is stacked with the first active layer. The second active layer includes a substrate and an ESD protection device, wherein the ESD protection device having a doping area embedded in the substrate, and the ESD protection device electrically connects the TSV device.Item type:Item, Integrated circuit device(2014-02-18) ;Chen Kuan-Neng ;Lai Ming-FangChen Hung-MingAn integrated circuit device includes: a first chip including a first substrate and a main circuit formed on said first chip; a second chip stacked on the first substrate and including a second substrate that is independent from the first substrate, and a protective circuit for protecting the main circuit; and a conductive channel unit extending from the protective circuit and electrically connected to the main circuit.Item type:Item, Integrated Circuit Device(2013-07-04) ;Chen Kuan-Neng ;Lai Ming-FangChen Hung-MingAn integrated circuit device includes: a first chip including a first substrate and a main circuit formed on said first chip; a second chip stacked on the first substrate and including a second substrate that is independent from the first substrate, and a protective circuit for protecting the main circuit; and a conductive channel unit extending from the protective circuit and electrically connected to the main circuit.