Browsing by Author "Laih, LW"

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As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity
(2004-06-01)
Laih, LH
;
Kuo, HC
;
Lin, GR
;
Laih, LW
;
Wang, SC
We report the utilization of an As+-implanted Al-GaAs region and regrowth method to enhance and control the wet thermal oxidation rate for 850-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL). The oxidation rate of the As+-implanted device showed a four-fold increase over the nonimplanted one at the As+ dosage of 1 x 10(16) cm(-3) and the oxidation temperature of 400 degreesC. 50 side-by-side As+-implanted oxide-confined VCSELs fabricated using the method achieved very uniform performance with a deviation in threshold current of DeltaI(th) similar to 0.2 mA and slope-efficiency of DeltaS.E. similar to 3%.
High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer
(2005)
Chang, YA
;
Lai, FI
;
Yu, HC
;
Kuo, HC
;
Laih, LW
In this paper, we employed a high bandgap Al0.75Ga0.25As layer acting as an electronic blocking layer in the upper In0.15Al0.08Ga0.77As/Al0.3Ga0.7As active region before the growth of p-type layers of 850-nm vertical-cavity surface-emitting lasers (VCSELs). A threshold current of 1.33mA and slope efficiency of 0.53W/A at 25 degrees C were obtained, and the temperature dependent light output and voltage versus current (L-I-V) characteristics showed that the VCSELs with a high bandgap Al0.75Ga0.25As layer were more stable when the substrate temperature was in a range of 25-95 degrees C. The threshold current increased with temperature up to 95 degrees C was less than 21% and the slope efficiency dropped only 24.5%.