Browsing by Author "Lan, C. H."

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GaN p-i-n photodetectors with an LT-GaN interlayer
(2008-04-01)
Lin, J. C.
;
Su, Y. K.
;
Chang, S. J.
;
Lan, W. H.
;
Huang, K. C.
Nitride-based p-i-n ultraviolet (UV) photodetectors with a low-temperature (LT) GaN interlayer were proposed and fabricated. Compared with a conventional GaN p-i-n photodetector, it was found that both the dark current and ideality factor of the p-i-n photodetector with an LT-GaN interlayer became larger whereas the UV-to-visible rejection ratio became smaller because of the poor crystal quality of the LT-GaN interlayer. However, the responsivity of the GaN p-i-n photocletector with an LT-GaN interlayer was larger than that of the conventional GaN p-i-n photocletector under a high reverse bias because of the carrier multiplication effect and/or internal gain that originated from the defect levels.