Browsing by Author "Lan, Wei-Cheng"

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Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applications
(2015-10-01)
Hsieh, Ting-En
;
Lin, Yueh-Chin
;
Liao, Jen-Ting
;
Lan, Wei-Cheng
;
Chin, Ping-Chieh
We demonstrate an Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistor (MIS-HEMT) device with stable electrical properties under high-voltage stress, by using an Al2O3/AlN stack layer as the gate dielectric layer. Excellent quality AlN/Al2O3 GaN interface was obtained by using plasma-enhanced ALD (PE-ALD), resulting in a very low interface trap density (D-it) of similar to 1.8 x 10(11) eV(-1) cm(-2), obtained by using the conductance method. The device exhibits a small threshold voltage hysteresis of similar to 200 mV and a lower gate-source leakage current. No obvious changes in the drain-source current and ON-resistance were observed for the device that was subject to the drain-source voltage stress of 100 V for 15 h. (C) 2015 The Japan Society of Applied Physics
GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications
(2015-12-01)
Hsieh, Ting-En
;
Lin, Yueh-Chin
;
Li, Fang-Ming
;
Shi, Wang-Cheng
;
Huang, Yu-Xiang
A GaN high-electron-mobility transistor (HEMT) with WN (x) /Cu gate for high-power applications has been investigated. The direct-current (DC) characteristics of the device are comparable to those of conventional Ni/Au-gated GaN HEMTs. The results of high-voltage stress testing indicate that the device is stable after application of 200 V stress for 42 h. The WN (x) /Cu-gated GaN HEMT exhibited no obvious changes in the DC characteristics or Schottky barrier height before and after annealing at 250A degrees C for 1 h. These results demonstrate that the WN (x) /Cu gate structure can be used in a GaN HEMT for high-power applications with good thermal stability.