Browsing by Author "Landheer, Dolf"

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Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation
(2007)
Chen, Jian Hao
;
Huang, Tzung Bin
;
Wu, Xiaohua
;
Landheer, Dolf
;
Lei, Tan Fu
In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N-2(+), ion implantation of N+, and N2O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2O-plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples. (c) 2006 The Electrochemical Society.
Si nanocrystal memory devices self-assembled by in situ rapid thermal annealing of ultrathin a-Si on SiO2
(2007)
Chen, Jian-Hao
;
Lei, Tan-Fu
;
Landheer, Dolf
;
Wu, Xiaohua
;
Liu, Jian
Si-nanocrystal memories have been fabricated using the thermal agglomeration of an ultrathin (0.9-3.5 nm) amorphous Si (a-Si) film. The a-Si was deposited by electron beam evaporation followed by in situ annealing at 850 C for 5 min. Hemispherical nanocrystals were obtained with a dot density up to 3.9 x 10(11) cm(-2), and a stored charge density of 4.1 x 10(12) cm(-2) (electron + hole) was achieved. The data retention characteristics of nanocrystal-embedded devices have shown a 1 V memory window after 100 h. Well-separated Si nanocrystals with a 23-32% surface-coverage ratio have been successfully demonstrated. The process compatibility of the proposed technique was also discussed. (C) 2007 The Electrochemical Society.