Browsing by Author "Lee, C. -T."

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Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation
(2009-12-03)
Lu, C. -Y.
;
Chang, E. Y.
;
Huang, J. -C.
;
Chang, C. -T.
;
Lee, C. -T.
An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WNx) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WNx HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device is 5 W/mm at 2 GHz. A combination of these findings indicates the robust performance of this WNx material and its potential as a Schottky gate for AlGaN/GaN HEMTs.